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A Novel Method of Fabricating SiC-On-Insulator Substrates for Use in MEMS

Published online by Cambridge University Press:  21 March 2011

Hung-I Kuo ,
Christian Zorman  and
Mehran Mehregany
Hung-I Kuo
Affiliation:
Department of Electrical Engineering and Computer ScienceCase Western Reserve UniversityCleveland, OH 44106, USA
Christian Zorman
Affiliation:
Department of Electrical Engineering and Computer ScienceCase Western Reserve UniversityCleveland, OH 44106, USA
Mehran Mehregany
Affiliation:
Department of Electrical Engineering and Computer ScienceCase Western Reserve UniversityCleveland, OH 44106, USA
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Abstract

This paper reports on a novel, bonding-free method to fabricate silicon carbide-on-insulator (SiCOI) substrates. The process bypasses wafer bonding by using a high deposition rate polysilicon process in conjunction with wet chemical etching to produce wafer-thick polysilicon layers that serve as substrates for the SiCOI structures. Because wafer bonding is not used, insulators of various material types and thickness can be used. Using this method, transfer percentages over 99% are readily achievable. Various applications could benefit from this technology, including high temperature SiC-based microelectromechanical systems (MEMS) and SiC electronic devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 681: Symposium I – Wafer Bonding and Thinning Techniques for Materials Integration , 2001 , I5.16
Copyright
Copyright © Materials Research Society 2001

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References

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