Anodic Aluminum Oxide (AAO) was grown both as free-standing membranes and as integrated layers on Si as templates for arrays of magnetoresistive nanowires. These structures will be useful for applications such as current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) sensors, magnetic random access memory (MRAM) and microwave oscillator arrays. As the AAO was formed, using a two-step anodization process, columnar nanopores self-assembled inside the oxide to form a close-packed array. The pore diameters could be varied from 10-60nm by changing the anodization conditions. As the diameter of the AAO nanopores decreased, the distance between the nanopores also decreased. The free-standing membranes had pores with lengths of 17um. The pores that were grown directly onto Si with an adhesion layer of Ti were 600nm in length. In addition to growing these latter pores directly onto Si, they were also grown onto Co/Cu/Co thin films that were evaporated onto the Si. Au nanocontacts were electroplated into these nanopores to study point-contact magnetoresistance and microwave response. For the magnetoresistive nanostructures, multilayered Co/Cu nanowires were fabricated via electrochemical deposition. The samples were measured with vibrating sample magnetometry (VSM) and also using ac and dc magnetotransport systems. The highest magnetoresistance was found in nanowires that had hysteresis loops that were identical as measured in plane and perpendicular to the plane. The highest measured MR (Delta R/R = 11%) of the multilayers was calculated as 33% by subtracting the resistance of the Cu leads on either side of the multilayers from the denominator. Shorter wires are currently under construction to avoid this effect. Spin transfer torque (STT) was also measured in the samples. For 10-60nm diameter nanowires, the change in resistance due to STT was around 6% which represents the full magnetoresistance of the larger wires, but only half that of the smaller nanowires. It is therefore concluded that the 10-nm Co layers do not align antiparallel to parallel as fully at the switching current density of JAP-P = 2.7 × 108 A/cm2 compared to the larger wires which switch at JAP-P = 3.2 × 107 A/cm2. With diameters in the 10-60 nm range and integration with Si, these nanostructures have great potential for future nanosensors, MRAM and microwave oscillator arrays.