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A Novel Implantation Free Raised Source/Drain Mosfet Process Using Selective Rapid Thermal Chemical Vapor Deposition Of In-Situ Boron Doped SixGe1-x

Published online by Cambridge University Press:  21 February 2011

Xiaowei Ren ,
Mehmet C. Öztürk ,
Douglas T. Grider ,
Mahesh Sanganeria  and
Stanton Ashburn
Xiaowei Ren
Affiliation:
North Carolina State University, Department of Electrical and Computer Engineering Box 7911, Raleigh, NC 27695-7911
Mehmet C. Öztürk
Affiliation:
North Carolina State University, Department of Electrical and Computer Engineering Box 7911, Raleigh, NC 27695-7911
Douglas T. Grider
Affiliation:
North Carolina State University, Department of Electrical and Computer Engineering Box 7911, Raleigh, NC 27695-7911
Mahesh Sanganeria
Affiliation:
North Carolina State University, Department of Electrical and Computer Engineering Box 7911, Raleigh, NC 27695-7911
Stanton Ashburn
Affiliation:
North Carolina State University, Department of Electrical and Computer Engineering Box 7911, Raleigh, NC 27695-7911
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Abstract

In this paper, we report electrical characterization of raised source/drain MOS transistors fabricated using selectively deposited, in-situ boron doped SixGe1-x as a solid diffusion source to form the source/drain junctions. The alloy can be deposited with an enhanced selectivity at temperatures as low as 600°C resulting in an abrupt doping profile at the SixGe1-x/Si interface. After deposition, junctions are formed by diffusion of boron from the deposited layer into the silicon substrate. The selectively deposited alloy can serve as a sacrificial layer for self-aligned silicide formation elimintaing the problem of silicon consumption in the substrate. In this work, selective depositions were performed in a typical cold-walled, lamp heated rapid thermal chemical vapor deposition (RTCVD) system at ∼ 610 °C using SiH2C12, GeH4 and B2H6 as the reactive gases. Using this process, MOS transistors with effective channel lengths down to 0.45 gtm were successfully fabricated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 303: Symposium G – Rapid Thermal and Integrated Processing II , 1993 , 37
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Baccarani, G., Wordeman, M.R., and Dennard, R.H., IEEE Transactions on electron devices, ED–31, 452 (1984).Google Scholar
2. Wong, S.S., Bradbury, D.R., Chen, D.C., and Chiu, K.Y., IEDM Technical Digest, 634, (1984).Google Scholar
3. Shibata, H., Suizu, Y., S.Samata, Matsuno, T., and Hashimoto, K., IEDM Technical Digest, 590, (1987).Google Scholar
4. Lynch, W.T., Foo, P.D., Liu, R., Lebowitz, J., Orlowsky, K.J., Georgiou, G.E., and Hillenius, S.J.,Solid State Devices, 25 (1988).Google Scholar
5. Shin, H., Tasch, A.F., Bordelon, T.J., and Maziar, C.M., IEEE Transactions on Electron Devices, 39, 1922 (1992).Google Scholar
6. Osburn, C.M.,Journal of Electronic Materials, 19, 67 (1990).Google Scholar
7. Zhong, Y., Öztürk, M.C., Grider, D.T., Wortman, J.J., and Littlejohn, M.A., Applied Physics Letters, 57, 2092 (1990).Google Scholar
8. Grider, D.T., Öztürk, M.C., and Wortman, J.J., in 179th meeting of the Electrochemical Society, Proceedings of the third International Symposium on ULSI Science and Technology, p. 296 (1991).Google Scholar
9. Grider, D.T., Öztürk, M.C., Harris, G., Wortman, J.J., and Maher, D.M., to be published, (1993).Google Scholar
10. Ashburn, S.P., Öztürk, M.C., Harris, G., and Maher, D.M., Proceedings of the Advanced metalization for ULSI applications, 1992.Google Scholar
11. Sanganeria, M., Grider, D.T., Öztürk, M.C., and Wortman, J.J., Journal of Electronic Materials Journal of Electronic Materials, 21, 61 (1992).CrossRefGoogle Scholar
12. Johnson, F.S., Miles, D.S., Grider, D.T., and Wortman, J.J., Journal of Electronic Materials, 21, 805 (1992).Google Scholar
13. Chern, J.G.J., Chang, P., Motta, R.F., and Godinho, N., IEEE Electron Device Letters, EDL–1, 170 (1980).Google Scholar