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Nondestructive defect measurement and surface analysis of 3C-SiC on Si (001) by electron channeling contrast imaging

Published online by Cambridge University Press:  01 February 2011

Yoosuf N. Picard ,
Christopher Locke ,
Christopher L. Frewin ,
Rachael L. Myers-Ward ,
Joshua D. Caldwell ,
Karl D. Hobart ,
Mark E. Twigg  and
Stephen E. Saddow
Yoosuf N. Picard
Affiliation:
[email protected], Naval Research Lab, Electronics Science and Technology, Code 6812, 4555 Overlook Ave. SW, Washington, DC, 20375, United States
Christopher Locke
Affiliation:
[email protected], University of South Florida, Electrical Engineering Dept., 4202 E. Fowler Ave., Tampa, FL, 33620, United States
Christopher L. Frewin
Affiliation:
[email protected], University of South Florida, Electrical Engineering Dept., 4202 E. Fowler Ave., Tampa, FL, 33620, United States
Rachael L. Myers-Ward
Affiliation:
[email protected], Naval Research Lab, Electronics Science and Technology, Code 6812, 4555 Overlook Ave. SW, Washington, DC, 20375, United States
Joshua D. Caldwell
Affiliation:
[email protected], Naval Research Lab, Electronics Science and Technology, Code 6812, 4555 Overlook Ave. SW, Washington, DC, 20375, United States
Karl D. Hobart
Affiliation:
[email protected], Naval Research Lab, Electronics Science and Technology, Code 6812, 4555 Overlook Ave. SW, Washington, DC, 20375, United States
Mark E. Twigg
Affiliation:
[email protected], Naval Research Lab, Electronics Science and Technology, Code 6812, 4555 Overlook Ave. SW, Washington, DC, 20375, United States
Stephen E. Saddow
Affiliation:
[email protected], University of South Florida, Electrical Engineering Dept., 4202 E. Fowler Ave., Tampa, FL, 33620, United States
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Abstract

The electron channeling contrast imaging (ECCI) technique was utilized to investigate atomic step morphologies and dislocation densities in 3C-SiC films grown by chemical vapor deposition (CVD) on Si (001) substrates. ECCI in this study was performed inside a commercial scanning electron microscope using an electron backscatter diffraction (EBSD) system equipped with forescatter diode detectors. This approach allowed simultaneous imaging of atomic steps, verified by atomic force microscopy, and dislocations at the film surface. EBSD analysis verified the orientation and monocrystalline quality of the 3C-SiC films. Dislocation densities in 3C-SiC films were measured locally using ECCI, with qualitative verification by x-ray diffraction. Differences in the dislocation density across a 50 mm diameter 3C-SiC film could be attributed to subtle variations during the carbonization process across the substrate surface.

Keywords

dislocationschemical vapor deposition (CVD) (deposition)scanning electron microscopy (SEM)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1068: Symposium C – Advances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates , 2008 , 1068-C07-08
Copyright
Copyright © Materials Research Society 2008

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References

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