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Newly Developed Abrasive-free Copper CMP Slurry Based on Electrochemical Analysis

Published online by Cambridge University Press:  01 February 2011

Jin Amanokura ,
Katsumi Mabuchi ,
Takafumi Sakurada ,
Yutaka Nomura ,
Masanobu Habiro  and
Haruo Akahoshi
Jin Amanokura
Affiliation:
[email protected], Hitachi Chemical Co., Ltd., Semiconductor Material Division, 4-13-1 Higashi-cho, Hitachi, CA, N/A, Japan
Katsumi Mabuchi
Affiliation:
[email protected], Hitachi Ltd., Hitachi, N/A, Japan
Takafumi Sakurada
Affiliation:
[email protected], Hitachi Chemical Co., Ltd., Hitachi, N/A, Japan
Yutaka Nomura
Affiliation:
[email protected], Hitachi Chemical Co., Ltd., Hitachi, N/A, Japan
Masanobu Habiro
Affiliation:
[email protected], Hitachi Chemical Co., Ltd., Hitachi, N/A, Japan
Haruo Akahoshi
Affiliation:
[email protected], Hitachi Ltd., Hitachi, N/A, Japan
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Abstract

In order to reduce microscratches and obtain minimized dishing and erosion, we have developed new abrasive-free Cu CMP slurries. During the development of these slurries, some electrochemical examination was performed. The most effective knowledge was obtained through the analysis using rotary Cu disk electrode under pressure. On the basis of these studies, new abrasive-free Cu CMP slurries with a high removal rate and excellent planarity were designed and developed. The mechanism of reducing dishing and erosion was also discussed.

Keywords

Cuadditiveselectronic material
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 991: Symposium C – Advances and Challenges in Chemical Mechanical Planarization , 2007 , 0991-C03-01
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

1 Edlstein, D., Heidenreich, J., Goldblatt, R., Cote, W., Uzoh, C., Lustig, N., Roper, P., McDevitt, T., Motssiff, W., Simon, A., Dukovic, J., Wachnik, R., Rathore, H., Schulz, R. Su, L., Luce, S., and Slattery, J., Technical Digest, IEEE International Electronic Devices Meeting, 773 (1997).Google Scholar
2 Tyagi, S., Alavi, M., Bigwood, R., Bramblett, T., Branddenberg, J., Chen, W., Crew, B., Hussein, M., Jacob, P., Kenyon, C., Lo, C., Mcintyre, B., Ma, Z., Moon, P., Nguyen, P., Rumaner, L., Schweinfurth, R., Sivakumar, S., Stettler, M., Thompson, S., Tufts, B., Xu, J., Yang, S., and Bohr, M., ibid., 567 (2000).Google Scholar
3 Besser, Paul, Marathe, Amit, Zhao, Larry, Herrick, Matthew, Cappasso, Cristiano, and Kawasaki, Hisao, ibid., 119 (2000).Google Scholar
4 Steigerwald, J., Zirpoli, R., Murarka, S., Price, D., and Gutmnm, R., J. Electrochem. Soc., 141,2842 (1994).Google Scholar
5 Kondo, S., Sakuma, N., Homma, Y., Goto, Y., Ohashi, N., Yamaguchi, H., and Owada, N.,Proceeding of International Interconnect Technology Conf.,253–255 (2000).Google Scholar
6 Kondo, S., Sakuma, N., Homma, Y., Goto, Y., Ohashi, N., Yamaguchi, H., and Owada, N., J.Electrochem. Soc., 147, 3907 (2000).Google Scholar
7 Yamaguchi, H., Ohashi, N., Imai, T., Torii, K., Noguchi, J., Fujiwara, T., Sato, T., Owada, N., Homma, Y., Kondo, S. and Hinode, K., Proceeding of International Interconnect Technology Conf.,264–266 (2000).Google Scholar
8 Ohashi, N., Yamada, Y., Konishi, K., Maruyama, H., Oshima, T., Yamaguchi, H., ibid., 140–142(2001).Google Scholar
9 Kamigata, Y., Kurata, Y., Masuda, K., Amanokura, J., Yoshida, M. and Hanazono, M.,Proceeding of Material Research Society Meeting,671,M1.3.1 (2000).Google Scholar
10 , Kaufman, Thompson, D., Broadie, R., Jaso, M., Guthrie, W., Pearson, D. and Small, M., J.Electrochem. Soc., 138, 3460 (1991).Google Scholar
11 Saitoh, T., Nishizawa, H., , Jin, Amanokura, , and Hanazono, M., Proceeding of Electrochemical Society, 201st meeting (2002).Google Scholar
12 Amanokura, J., Kamigata, Y., Habiro, M., Suzuki, H. and Hanazono, M., Proceeding of Material Research Society Meeting, 732E, I1.2.1 (2002).Google Scholar
13 Osseo-asare, K., Mishara, K., J. Electronic Materials, 25, 1599 (1996).Google Scholar