We have developed a new method of cleaning p+-Si surfaces by plasma hydrogenation and subsequent HF treatment prior to selective W-CVD by SiH4 reduction. The hydrogenation enhances the hydrogen-termination of p+-Si surfaces in HF solution significantly, resulting in high controllability in selective W-CVD on p+-Si surfaces. Contact resistivity was 0.5 to 3×10-7 Ω cm2 for single- and poly-crystalline p+-Si. The increase in junction leakage current was fairly small because of low Si consumption.