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A New Parameter Predicating Gm for Ultra Thin Nitrided Gate Oxide

Published online by Cambridge University Press:  01 February 2011

Mitsuaki Hori ,
Naoyoshi Tamura ,
Masataka Kase ,
Hiroko Sakuma ,
Hiroyuki Ohota ,
Mayumi Shigeno  and
Yuuzi Kataoka
Mitsuaki Hori
Affiliation:
Advanced LSI Development Division, LSI Group, Fujitsu Limited, Akiruno, Tokyo, 197-0833, Japan
Naoyoshi Tamura
Affiliation:
Advanced LSI Development Division, LSI Group, Fujitsu Limited, Akiruno, Tokyo, 197-0833, Japan
Masataka Kase
Affiliation:
Advanced LSI Development Division, LSI Group, Fujitsu Limited, Akiruno, Tokyo, 197-0833, Japan
Hiroko Sakuma
Affiliation:
Advanced LSI Development Division, LSI Group, Fujitsu Limited, Akiruno, Tokyo, 197-0833, Japan
Hiroyuki Ohota
Affiliation:
Advanced LSI Development Division, LSI Group, Fujitsu Limited, Akiruno, Tokyo, 197-0833, Japan
Mayumi Shigeno
Affiliation:
Nanoelectronic Materials Research and Engineering Laboratory, Fujitsu Laboratories Limited, Atsugi, Kanagawa, 243-0197, Japan
Yuuzi Kataoka
Affiliation:
Nanoelectronic Materials Research and Engineering Laboratory, Fujitsu Laboratories Limited, Atsugi, Kanagawa, 243-0197, Japan
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Abstract

We propose a new parameter predicating transconductance (Gm) of the gate dielectric of nitrided SiO2 with the physical thickness below 1.1 nm for high-performance transistors. The 6 different type of nitrided SiO2 are formed using the plasma nitridation or nitric oxide (NO) gas annealing in conditions to adjust a optical thickness ranging 0.96 to 1.19 nm. The material property of nitrided SiO2 are analyzed by secondary ions mass spectroscopy (SIMS) and x-ray photoelectron spectroscopy (XPS). The MOSFET are fabricated using these gate dielectric and 90 nm generation CMOS technology. Then we find a good correlation between the maximum of Gm and the percentage of amount of N(SiN3)3 substructure at the total amount of NSi3 structure measured by XPS, rather than the total dose of nitrogen measured by SIMS.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 765: Symposium D – CMOS Front-End Materials and Process Technology , 2003 , D3.1
Copyright
Copyright © Materials Research Society 2003

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References

[1] Nakai, S. et al.; Symp. on VLSI Tech. 7–3 (2002)Google Scholar
[2] Inaba, S. et al.; IEDM Tech. Dig. 29.6, p.423 (2001)Google Scholar
[3] Kataoka, Y., Shigeno, M. and Wittmaack, K., J. Vac.Sci.Technol. B 20 (1), 441 (2002)Google Scholar
[4] Wittmaack, K. and Loibl, N, Proc. of SIMS, p131 (2001)Google Scholar
[5] Kushida-Abdelghafar, Keiko et al.; J.Appl.Phys., Vol.92, No 5, 1 (2002)Google Scholar
[6] Ikarashi, Watanabe, and , Miyamoto; J.Appl.Phys., Vol.90, No 6, 15 (2001)Google Scholar
[7] Hikazutani, K. et al.; Proc.on Jpn.Applied physics fall meeting, 3p-ZT-4, p.702 (1999)Google Scholar