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New Contact Etch Process for Embedded DRAM Applications

Published online by Cambridge University Press:  10 February 2011

Chan-Lon Yang ,
Tong-Yu Chen ,
Keh-Ching Huang ,
Le-Tien Jung ,
Tsu-An Lin  and
Water Lur
Chan-Lon Yang
Affiliation:
United Microelectronics Corporation, Hsinchu, Taiwan, R.O.C.
Tong-Yu Chen
Affiliation:
United Microelectronics Corporation, Hsinchu, Taiwan, R.O.C.
Keh-Ching Huang
Affiliation:
United Microelectronics Corporation, Hsinchu, Taiwan, R.O.C.
Le-Tien Jung
Affiliation:
United Microelectronics Corporation, Hsinchu, Taiwan, R.O.C.
Tsu-An Lin
Affiliation:
United Microelectronics Corporation, Hsinchu, Taiwan, R.O.C.
Water Lur
Affiliation:
United Microelectronics Corporation, Hsinchu, Taiwan, R.O.C.
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Abstract

For embedded DRAM (E-DRAM) devices with feature sizes of 0.25 µm and beyond, contact processes with low contact resistance and low junction leakage current are required. The contact etch process needs to etch through multi-layer structures with SiO2, SiON/SiN layers and stop on Ti-polycide gate and Ti-salicide active regions at the same time. The key issues include high selectivity to TiSix, vertical profile, complete removal of SiON/SiN cap layer and no polymer residues. In this paper, multi-layer contact etching without attacking TiSix is reported. Using new process chemistry, the new contact etch process has been demonstrated for the manufacturing of 0.25 µm E-DRAM and beyond.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 564: Symposium N – Advanced Interconnects and Contacts , 1999 , 177
Copyright
Copyright © Materials Research Society 1999

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References

(1) Ishiuchi, H., Yoshida, T., Takato, H., Tomioka, T., Matsuo, K., Momose, H., Sawada, S., Yamazaki, K., and Maeguchi, K., IEDM Technical Digest, pp33–36, 1997.Google Scholar
(2) Togo, M., Noda, K., and Tanigawa, T., IEDM Technical Digest, pp 347–350, 1998.Google Scholar
(3) Takahashi, A., Ikegami, N., Kobayashi, M., and Kanamori, J., Proc. Dry Process Symp. pp 251–256, 1998.Google Scholar
(4) Ito, Y., Koshiishi, A., Shimizu, R., Hagiwara, M., Inazawa, K. and Nishimura, E., Proc. Dry Process Symp. pp 263–268, 1998.Google Scholar
(5) Yang, C.L., Marks, J., Collins, K., Groechel, D., Keswick, P., Cunning-ham, C., Carlson, M., Proc. SPIE, 1803, 1992.Google Scholar
(6) Givens, J., Geissler, S., Lee, J., Gain, O., Keswick, P., Marks, J., and Cunningham, C., J. Vac. Sci. Technol. B, Vol. 12, pp 427–432, 1994.10.1116/1.587139Google Scholar
(7) Schaepkens, M., G, Oehrlein, S., Hedlund, C., Jonsson, L. B. and Blom, H., J. Vac. Sci. Technol. A, Vol. 16, pp 3281–3286, 1998.10.1116/1.581534Google Scholar