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Movpe Growth of High Quality AlxGa1−xN/GayIn1-yN (x>0, y<1) Heterostructures for Short Wavelength Light Emitter

Published online by Cambridge University Press:  21 February 2011

I. Akasaki  and
H. Amano
I. Akasaki
Affiliation:
Meijo University, Department of Electrical and Electronic Engineering, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468, Japan.
H. Amano
Affiliation:
Meijo University, Department of Electrical and Electronic Engineering, 1–501 Shiogamaguchi, Tempaku-ku, Nagoya 468, Japan.
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Abstract

High-quality AlGaN/GaN and AlGaN/GalnN DHs were fabricated by MOVPE using low-temperature deposited AlN buffer layer. We applied the newly designed dual-flow-channel reactor, by which high-quality and well-controlled AlGaN and GalnN alloys and their heterostructures have been grown. AlGaN/GaN-DH shows low-threshold stimulated emission by optical pumping at room temperature for both edge and surface modes. The peak wavelength of stimulated emission for edge mode was 369.5nm. The peak wavelength of stimulated emission was affected by the strain due to heterostructure as well as the many body effect under high excitation. The wavelength for stimulated emission can be widely changed by using GalnN as the active layer. AlGaN/GalnN DH with InN molar fraction of the active layer of 0.09 shows room temperature low-threshold stimulated emission for edge mode by optical pumping with peak wavelength of 402.5nm. A few mW-class symmetrical AlGaN/GaN DH LED and anti symmetrical AlGaN/GalnN/GaN DH LED using low energy electron beam irradiation (LEEB1) treated Mg-doped P-AlGaN cladding layer were fabricated. These results show that column-Ill nitrides are promising for the realization of practical short wavelength LED and LD.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 443
Copyright
Copyright © Materials Research Society 1994

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References

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