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Monolithic GaAs/Si Integration

Published online by Cambridge University Press:  28 February 2011

George W. Turner ,
H. K. Choi ,
J. P. Mattia ,
C. L. Chen ,
S. J. Eglash  and
B-Y. Tsaur
George W. Turner
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02173–0073
H. K. Choi
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02173–0073
J. P. Mattia
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02173–0073
C. L. Chen
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02173–0073
S. J. Eglash
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02173–0073
B-Y. Tsaur
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA 02173–0073
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Abstract

The recent demonstrations of room-temperature cw operation of diode lasers fabricated in GaAs/AlGaAs layers grown on Si wafers have encouraged efforts to develop monolithic GaAs/Si integration technology for applications such as optical interconnects between VLSI subsystems. This paper summarizes our current work in this area, which is focused on the development of a highspeed, MSI-scale monolithic GaAs/Si test chip that integrates Si MOSFET circuits with diode lasers, LEDs, photoconductive detectors, and MESFET logic circuits fabricated in GaAs/AlGaAs layers grown by molecular beam epitaxy. Growth issues and processing considerations that affect device and circuit performance are addressed, and the characteristics of LEDs monolithically integrated with Si driver circuits and of GaAs microwave MESFETs fabricated on high-resistivity Si substrates are reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 116 , 1988 , 179
Copyright
Copyright © Materials Research Society 1988

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References

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