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Microwave Plasma LPCVD of Tungsten in a Cold-Wall Lamp-Heated Rapid Thermal Processor

Published online by Cambridge University Press:  28 February 2011

Mehrdad M. Moslehi ,
Krishna C. Saraswat  and
Steven C. Shatas
Mehrdad M. Moslehi
Affiliation:
Center for Integrated Systems, Stanford University, Stanford, California 94305
Krishna C. Saraswat
Affiliation:
Center for Integrated Systems, Stanford University, Stanford, California 94305
Steven C. Shatas
Affiliation:
Nanosil, Sunnyvale, California
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Abstract

A novel cold-wall single-wafer lamp-heated Rapid Thermal/Microwave Remote Plasma Multiprocessing (RTMRPM) reactor has been developed for multilayer in-situ growth and deposition of dielectrics, silicon, and metals. This equipment is the result of an attempt to enhance semiconductor processing equipment versatility, to improve process reproducibility and uniformity, to increase growth and deposition rates at reduced processing temperatures, and to achieve in-situ multiprocessing in conjunction with real-time process monitoring and automation. For high-performance MOS VLSI applications, a variety of selective and nonselective tungsten deposition processes were investigated in this work. The tungsten gate MOS devices fabricated using the remote plasma multiprocessing techniques exhibited negligible plasma damage and near-ideal electrical characteristics. The flexibility of the reactor allows optimization of each process step yet allows multiprocessing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 92: Symposium B – Rapid Thermal Processing of Electronic Materials , 1987 , 295
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

[1] Gibbons, J. F. et al. , Appl. Phys. Left., vol. 47, pp. 721–723, 1985.Google Scholar
[2] Sturm, J. C. et al. , IEEE Electron Device Lett., vol. EDL–7(5), pp. 282–284, 1986.Google Scholar
[3] Moslehi, M. M. et al. , The Fifth Intl. Symp. on Silicon Materials Sci. and Technol., ECS Proc. vol. 86–4, pp. 379–397, 1986.Google Scholar
[4] Moslehi, M. M. et al. , J. Appl. Phys., vol. 58(6), pp. 2416–2419, 1985.Google Scholar
[5] Kobayashi, N. et al. , Proc. Third Intl. IEEE VLSI Multilevel Interconnection Conf. 1986.Google Scholar
[6] Moslehi, M. M. et al. , 1987 Symp. on VLSI Technol., (Japan) 1987.Google Scholar
[7] Iwata, S. et al. , IEEE Trans. Electron Devices, vol. ED–31(9), pp. 1174–1179, 1984.Google Scholar
[8] Tsuzuku, S. et al. , Electrochem. Soc. Fall Meeting, ECS vol. 86–2, p. 500, 1986.Google Scholar
[9] Melliar-Smith, C. M. et al. , J. Electrochem. Soc., vol. 121(2), pp. 298–303, 1974.Google Scholar
[10] Wong, M. et al. , Submitted to IEEE Electron Device Letters.Google Scholar