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Microstructure and Lifetime Study of Al/Y Films

Published online by Cambridge University Press:  10 February 2011

L. Vedula ,
V. Pillai ,
V. S. Nimmagadda ,
R. Singh ,
K. F. Poole ,
H. Gao  and
S. J. Pennycook
L. Vedula
Affiliation:
Clemson University, Clemson, SC 29634
V. Pillai
Affiliation:
Clemson University, Clemson, SC 29634
V. S. Nimmagadda
Affiliation:
Clemson University, Clemson, SC 29634
R. Singh
Affiliation:
Clemson University, Clemson, SC 29634
K. F. Poole
Affiliation:
Clemson University, Clemson, SC 29634
H. Gao
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831
S. J. Pennycook
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831
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Abstract

Thin Al films alloyed with three different compositions (0.1%, 1%, 5% by weight) of Yttrium were deposited by D.C. Magnetron Sputtering onto oxidized Si wafer substrates. The samples were furnace annealed at 425 °C for 30 minutes. Resistivity measured for the as-deposited and annealed Al(0. lwt% Y) were 3.07 and 2.57+/−0.25 μΩcm respectively. Al(0. lwt% Y) was also annealed by furnace annealing (FA), rapid thermal annealing (RTA) and rapid photothermal annealing (RPA). RPA gave a residual resistivity of 2.67μΩcm in 5 minutes and at a temperature of 350 C for Al(0. lwt% Y). Mean time to failure for AI(0. lwt% Y) samples at a current density of 3.2+/−0.5×106A/cm2 at 30 C was 50 hours. TEM results showed grain size variation from 0.5 to 2 μm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 514: Symposium I – Advanced Interconnects & Contact Materials & Processes for… , 1998 , 107
Copyright
Copyright © Materials Research Society 1998

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References

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