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Microstructure and dielectric properties of epitaxial BaTiO3 films and BaTiO3/SrTiO3 multilayers

Published online by Cambridge University Press:  11 February 2011

A. Visinoiu ,
R. Scholz ,
M. Alexe  and
D. Hesse
A. Visinoiu
Affiliation:
Max Planck Institute of Microstructure Physics, D-06120 Halle (Saale), Germany.
R. Scholz
Affiliation:
Max Planck Institute of Microstructure Physics, D-06120 Halle (Saale), Germany.
M. Alexe
Affiliation:
Max Planck Institute of Microstructure Physics, D-06120 Halle (Saale), Germany.
D. Hesse
Affiliation:
Max Planck Institute of Microstructure Physics, D-06120 Halle (Saale), Germany.
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Abstract

Epitaxial BaTiO3 films and BaTiO3/SrTiO3 multilayers were grown by pulsed laser deposition (PLD) on (001)-oriented Nb-doped SrTiO3 (SrTiO3:Nb) substrates. Measurements of the dielectric properties were performed comparing BaTiO3 films and BaTiO3/SrTiO3 multilayers of different number of individual layers, but equal overall thickness. The dielectric loss saturates for a thickness above 300 nm, and linearly decreases with decreasing film thickness below a thickness of 75 nm, and it is independent on the number of multilayers, pointing to some interface effect. The thickness dependence of the dielectric constant of BaTiO3 films and BaTiO3/SrTiO3 multilayers exhibits a change in the linear slope at a thickness of 75 nm. This behavior is explained by the change observed in the morphology at a thickness of 75 nm. In order to explain the thickness dependence of the dielectric constant, two approaches are considered in this paper, viz. a “series capacitor” model and a “dead layer” model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 748: Symposium U – Ferroelectric Thin Films XI , 2002 , U13.2
Copyright
Copyright © Materials Research Society 2003

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