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Memory Effect in Simple Cu Nanogap Junction

Published online by Cambridge University Press:  01 February 2011

Hiroshi Suga ,
Masayo Horikawa ,
Hisao Miyazak ,
Shunsuke Odaka ,
Kazuhito Tsukagoshi ,
Tetsuo Shimizu  and
Yasuhisa Naitoh
Hiroshi Suga
Affiliation:
[email protected], National Institute Science and Technology(AIST), Nanosystem Research Institute, Tsukuba, Japan
Masayo Horikawa
Affiliation:
[email protected], National Institute Science and Technology(AIST), Nanosystem Research Institute, Tsukuba, Japan
Hisao Miyazak
Affiliation:
[email protected], National Institute for Materials Science (NIMS), Research Center for Materials Nanoarchitectonics (MANA), Tsukuba, Japan
Shunsuke Odaka
Affiliation:
[email protected], National Institute for Materials Science (NIMS), Research Center for Materials Nanoarchitectonics (MANA), Tsukuba, Japan
Kazuhito Tsukagoshi
Affiliation:
[email protected], National Institute for Materials Science (NIMS), Research Center for Materials Nanoarchitectonics (MANA), Tsukuba, Japan
Tetsuo Shimizu
Affiliation:
[email protected], National Institute Science and Technology(AIST), Nanosystem Research Institute, Tsukuba, Japan
Yasuhisa Naitoh
Affiliation:
[email protected], National Institute Science and Technology(AIST), Nanosystem Research Institute, Tsukuba, Japan
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Abstract

We have investigated the resistance switching effect in Cu nanogap junction. Nanogap structures were created by means of electromigration and their electrical properties were measured in a high vacuum chamber. The measured current-voltage characteristics exhibited a clear negative resistance and memory effect with a large on-off ratio of over 105. The estimation from I-V curves indicates that the resistance switching was caused by the gap size change, which implies that the nanogap switching (NGS) effect also occurs in Cu electrodes, a popular wiring material in an integrated circuit.

Keywords

electromigrationmemorynanostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1250: Symposium G – Materials and Physics for Nonvolatile Memories II , 2010 , 1250-G10-05
Copyright
Copyright © Materials Research Society 2010

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