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Measurements of Grain Boundary Trap Density and Hydrogen Diffusivity in Polycrystalline Silicon Fet's

Published online by Cambridge University Press:  21 February 2011

Chad B. Moore  and
Dieter G. Ast
Chad B. Moore
Affiliation:
Department of Materials Science & Engineering, Bard Hall, Cornell University, Ithaca, NY 14853
Dieter G. Ast
Affiliation:
Department of Materials Science & Engineering, Bard Hall, Cornell University, Ithaca, NY 14853
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Abstract

Hydrogen diffusion in as-deposited and in oxidation-annealed polycrystalline silicon films was investigated using n-type accumulation-mode MOSFET's. The diffusion was studied by measuring the reduction in the grain boundary trap density with hydrogenation time. The number of traps in fully hydrogenated as-deposited films fell to about 45% of the initial trap state density and fell to about 20% in the oxidized-annealed films. Concurrently, the mobility increased about 95 % to 5cm2/Vs in the as-deposited films and by about 55 % to 25 cm2/Vs in the oxidized polysilicon devices. The effective preexponential diffusion coefficient and activation energy for hydrogen diffusion in the two different films were Do= 5.4×10−10 cm2/s and EA= 0.37 eV for the as-deposited polysilicon and Do=2.1×10−10 cm2/s and EA= 0.36 eV for the oxidized polysilicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 182: Symposium C – Polysilicon Thin Films and Interfaces , 1990 , 341
Copyright
Copyright © Materials Research Society 1990

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References

[1] Kamins, T.I. and , Marcoux. IEEE Electron Device Lett. EDL–1, 158–61, 1980.Google Scholar
[2] Seager, C.H. and Ginley, D.S.. J. Appl. Phys. 52, 1050–5, 1981.Google Scholar
[3] Faughnan, B. and Ipri, A.C.. IEEE Trans. Electron Devices 36, 101–7, 1989.Google Scholar
[4] Wu, I.W., Lewis, A.G., Huang, T.Y., Chiang, A.. IEEE Electron Device Lett. 10,123–5, 1989.Google Scholar
[5] Proano, R.E., Misage, R.S. and Ast, D.G.. IEEE Trans. Electron Devices 36, 1915–22, 1989.10.1109/16.34270Google Scholar
[6] Pollack, G.P., Richardson, W.F., Malhi, S.D.S., Bonified, T., Shichijo, H., Banerjee, S., Elahy, M., Shah, A.H., Womac, R. and Chatterjee, P.K.. IEEE Electon Device Lett. EDL–5, 468–70, 1984.Google Scholar
[7] Seto, J.Y.W.. J. Appl. Phys. 46, 5247–54, 1975.Google Scholar
[8] Levinson, J., Shepherd, F.R., Scanlon, P.J., Westwood, W.D., Este, G. and Rider, A.M.. J. Appl. Phys. 53, 1193–202, 1982.Google Scholar
[9] Baccarani, G., Riccò, B., and Spadini, G.. J. Appl. Phys. 49, 5565–70, 1978.Google Scholar
[10] Kamins, T.I.. Solid-St. Electon. 15, 789–99, 1972.10.1016/0038-1101(72)90100-1Google Scholar
[11] Ahmed, S.S., Kim, D.M., and Shichijo, H.. IEEE Trans. Electron Devices ED–33, 973–85, 1986.10.1109/T-ED.1986.22603Google Scholar
[12] Proano, R.E. and Ast, D.G.. J. Appl. Phys. 66, 2189–99, 1989.10.1063/1.344317Google Scholar
[13] Antoniadis, D.A. J. Electrochem. Soc. 129, 1093–7, 1982.10.1149/1.2124034Google Scholar
[14] Proafio, R.E., PhD thesis, Cornell University, 1990.Google Scholar
[15] Kamins, T.I.. J. App. Phys. 42, 4357–65, 1971.Google Scholar
[16] Kaplan, D., Sol, N., Velasco, G. and Thomas, P.A.. Appl. Phys. Lett. 3, 440–2, 1978.10.1063/1.90370Google Scholar
[17] Ast, D.C. and Sullivan, T., JPL Report No. 956046-No.3, 1979.Google Scholar
[18] Seager, C.H. and Ginley, D.S.. Appl. Phys. Lett. 34, 337–40, 1979.Google Scholar
[19] Kalejs, J.P. and Rajendran, S.. Appl. Phys. Lett. 55, 2763–5, 1989.Google Scholar
[20] Dubé, C., Hanoka, J.I. and Sandstrom, D.B.. Appl. Phys. Lett. 44, 425–7, 1984.Google Scholar
[21] Hashimoto, E. and Kino, T.. J. Phys. F: Met. Phys. 13, 1157–65, 1983.Google Scholar
[22] Mayer, J.W. and Lau, S.S.. Electronic Materials Science: For Integrated Circuits in Si and GaAs, (Macmillan Publishing Company, 1990), p. 217.Google Scholar