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Measurement of the Sound Velocity in AlAs by Picosecond Ultrasonics

Published online by Cambridge University Press:  22 February 2011

D. A. Young ,
H. T. Grahn ,
H. J. Maris ,
J. Tauc ,
J. M. Hong  and
T. P. Smith III
D. A. Young
Affiliation:
Brown University, Providence, RI 02912
H. T. Grahn
Affiliation:
Brown University, Providence, RI 02912
H. J. Maris
Affiliation:
Brown University, Providence, RI 02912
J. Tauc
Affiliation:
Brown University, Providence, RI 02912
J. M. Hong
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598
T. P. Smith III
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598
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Abstract

Picosecond ultrasonics have been used to measure the sound velocity and index of refraction in a thin film of AlAs. The AlAs layer was grown by molecular-beam epitaxy on a buffer layer of GaAs which was deposited on a semi-insulating GaAs wafer. The AlAs film was capped by a thin layer of GaAs, and a very thin film of InSb. To generate a sound wave effectively a picosecond light pulse was absorbed in the InSb film. As the sound wave propagates through the microstructure it changes the optical properties in the various films, and this produces a change in the optical reflectivity, which is measured. From the round trip time of the acoustic wave we have determined the sound velocity in the AlAs film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 130: Symposium C – Thin Films: Stresses and Mechanical Properties I , 1988 , 59
Copyright
Copyright © Materials Research Society 1989

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References

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