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Materials and Interface Optimization of Heterojunction Silicon (HIT) Solar Cells Using in-situ Real-Time Spectroscopic Ellipsometry

Published online by Cambridge University Press:  21 March 2011

D.H. Levi ,
C.W. Teplin ,
E. Iwaniczko ,
R.K. Ahrenkiel ,
H.M. Branz ,
M.R. Page ,
Y. Yan ,
Q. Wang  and
T.H. Wang
D.H. Levi
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO, 80401, USA
C.W. Teplin
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO, 80401, USA
E. Iwaniczko
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO, 80401, USA
R.K. Ahrenkiel
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO, 80401, USA
H.M. Branz
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO, 80401, USA
M.R. Page
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO, 80401, USA
Y. Yan
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO, 80401, USA
Q. Wang
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO, 80401, USA
T.H. Wang
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO, 80401, USA
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Abstract

We have applied real-time spectroscopic ellipsometry (RTSE) as both an in-situ diagnostic and post-growth analysis tool for hydrogenated amorphous silicon (a-Si:H)/crystalline silicon (c-Si) heterojunction with intrinsic thin-layer (HIT) solar cells grown by hot-wire chemical vapor deposition. RTSE enables precise thickness control of the 5 to 25 nm layers used in these devices, as well as monitoring crystallinity and surface roughness in real time. Utilizing RTSE feedback, but without extensive optimization, we have achieved a photovoltaic energy conversion efficiency of 14.1% on an Al-backed p-type Czochralski c-Si wafer coated with thin i and n layers on the front. Open-circuit voltages above 620 mV indicate effective passivation of the c-Si surface by the a-Si:H intrinsic layer. Lifetime measurements using resonant coupled photoconductive decay indicate that surface recombination velocities can approach 1 cm/s. RTSE and transmission electron microscopy show that the intrinsic a-Si:H i-layers grow as a mixture of amorphous and nano-crystalline silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 808: Symposium A – Amorphous and Nanocrystaline Silicon Science and Technology-2004 , 2004 , A8.3
Copyright
Copyright © Materials Research Society 2004

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References

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