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Material Properties of a SiOC Low Dielectric Constant Film with Extendibility to k < 2.7

Published online by Cambridge University Press:  17 March 2011

Eugene S. Lopata ,
Lydia Young  and
John T. Felts
Eugene S. Lopata
Affiliation:
Silicon Valley Group/Thermal Systems, Scotts Valley, CA 95066
Lydia Young
Affiliation:
now at KLA-Tencor/Viper Division, San Jose, CA 95134
John T. Felts
Affiliation:
Nano Scale Surface Systems, Inc., Alameda, CA 94501
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Abstract

A plasma deposited SiOC very low k (VLK) interlayer dielectric (ILD) film has been developed which can be tuned to 2.5 = k = 3.0, demonstrates very good thermal stability, excellent adhesion properties, acceptable hardness, and an indication that it may be extendible to k < 2.5. This paper will disclose properties of this SiOC film which are important to a VLK ILD application.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 612: Symposium D – Materials, Technology & Reliability for Advanced Interconnects.. , 2000 , D5.3.1
Copyright
Copyright © Materials Research Society 2000

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References

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