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Low-Temperature PECVD Polysilicon Crystallization by Rapid Thermal Processing

Published online by Cambridge University Press:  10 February 2011

Mark Stewart ,
Howard Hovagimian ,
Jecko Arakkal ,
Sambit Saha  and
Miltiadis K. Hatalis
Mark Stewart
Affiliation:
Display Research Lab @ Lehigh University, Bethlehem, PA 18015
Howard Hovagimian
Affiliation:
Intevac Corporation 575 Menlo Dr. STE 4, Rocklin, CA 95765
Jecko Arakkal
Affiliation:
Display Research Lab @ Lehigh University, Bethlehem, PA 18015
Sambit Saha
Affiliation:
Display Research Lab @ Lehigh University, Bethlehem, PA 18015
Miltiadis K. Hatalis
Affiliation:
Display Research Lab @ Lehigh University, Bethlehem, PA 18015
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Abstract

This work investigates the solid phase crystallization of PECVD amorphous silicon films by rapid thermal processing (RTP) as an alternative to laser crystallization. It is shown that PECVD films can be crystallized by RTP at temperatures compatible with glass substrates. A statistical design approach was used to investigate the effect of the various deposition and annealing conditions on the crystallization temperature, material properties and TFT device performance. The investigated variables include deposition temperature, rf power, pressure, surface treatments, dehydrogenation treatment, source gas, dilutant gas, and RTP scan speed. Important deposition and crystallization parameters will be discussed regarding polysilicon film optimization.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 508: Symposium B – Flat Panel Display Materials - 1998 , January 1998 , 109
Copyright
Copyright © Materials Research Society 1998

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