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Low-Temperature Floating Plasma Oxidation of Poly-SiGe

Published online by Cambridge University Press:  10 February 2011

Zhineng Fan ,
Gang Zhao ,
Paul K. Chu ,
Zhonghe Jin ,
Hoi S. Kwok  and
Man Wong
Zhineng Fan
Affiliation:
Department of Physics and Materials Science, City University of Hong Kong, Hong Kong
Gang Zhao
Affiliation:
Department of Physics and Materials Science, City University of Hong Kong, Hong Kong
Paul K. Chu
Affiliation:
Department of Physics and Materials Science, City University of Hong Kong, Hong Kong
Zhonghe Jin
Affiliation:
Department of Electrical and Electronic Engineering, The Hong Kong University of Science and Technology, Hong Kong
Hoi S. Kwok
Affiliation:
Department of Electrical and Electronic Engineering, The Hong Kong University of Science and Technology, Hong Kong
Man Wong
Affiliation:
Department of Electrical and Electronic Engineering, The Hong Kong University of Science and Technology, Hong Kong
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Abstractor

Low temperature oxidation is an essential process for thin-film transistors (TFT) used in active-matrix liquid crystal displays (AMLCD). However, low temperature oxidation gives rise to defects at SiO2/poly-SiGe interfaces. We have recently developed a novel plasma oxidation method for poly-SiGe materials. The poly-SiGe wafers are soaked in 0.1 Torr pure oxygen RF (Radio Frequency) plasma and isolated. That is, the sample voltage is the same as the sheath potential of the floating wall, which is always negative since electrons move faster than ions.The defects caused by ion impact can therefore be reduced. No heating is applied during oxidation, as the sample is heated slightly by the plasma. Under our conditions, the temperature is below 100°C even after oxidation for two hours. Depth profiles are acquired by AES and the oxide/substrate interface is examined by XPS. NMOS devices fabricated using this gate oxide show good characteristics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 508: Symposium B – Flat Panel Display Materials - 1998 , January 1998 , 157
Copyright
Copyright © Materials Research Society 1998

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References

1. King, T. J., Saraswat, K. C., IEEE Electron Device Letters, 12, p. 584 (1991).Google Scholar
2. Adams, A. C., Solid State Technol., 26, p. 135 (1983).Google Scholar
3. Pliskin, W. A., J. Vac. Sci. Technol., 14, p. 1064 (1977).Google Scholar
4. Chanana, R. K., Upadhyay, H. A., Dwivedi, R. and Srivastava, S. K., Solid State Electronics, 38, p. 1075 (1995).Google Scholar
5. Li, P. W., Liou, H. K., Yang, E. S., Iyer, S. S., Smith, T. P. III and Lu, Z., Appl. Phys. Lett., 60, p. 3265 (1992).Google Scholar
6. Li, P. W. and Yang, E. S., Appl. Phys. Lett., 63, p. 2938 (1993).Google Scholar
7. Goh, I. S., Zhang, J. F., Hall, S., Eccleston, W. and Werner, K., Semicond. Sci. Technol., 10, p. 818 (1995).Google Scholar
8. Chu, P. K., Qin, S., Chan, C., Cheung, N. W., and Ko, P. K., IEEE Trans. Plasma Sci., 26, p. 1 (1998).Google Scholar
9. Lai, K., Kumar, K., Chou, A. and Lee, J. C., IEEE Electron Device Letters, 17, p. 82 (1996).Google Scholar
10. Fonash, S. J., Viswanathan, C. R. and Chan, Y. D., Solid State Technol., 37, p. 99 (1994).Google Scholar
11. Li, P. W., Yang, E. S., Yang, Y. F., Chu, J. O. and Meyerson, B. S., IEEE Electron Device Letters, 15, p. 402 (1994).Google Scholar
12. King, T. J. and Saraswat, K. C., IEEE Trans. on Elec. Dev., 41, p. 1581 (1994).Google Scholar
13. Shu, Q., Zhou, Y., Nakatsugawa, T., Chan, C., Nuclear Instruments & Methods in Physics Research, Section B, 124, p. 69 (1997).Google Scholar
14. Kim, Y. S., Choi, K. Y., Lee, S. K., Min, B. H., Japanese Journal of Applied Physics, Part 1, 33, p. 649 (1994).Google Scholar