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Low Temperature Zinc Indium Oxide Backplane Development for Flexible OLED Displays in a Manufacturing Pilot Line Environment

Published online by Cambridge University Press:  15 July 2011

Michael A. Marrs ,
Sameer M. Venugopal ,
Curtis D. Moyer ,
Edward J. Bawolek ,
Dirk Bottesch ,
Barry P. O’Brien ,
Rita J. Cordova ,
Jovan Trujillo ,
Cynthia S. Bell  and
Douglas E. Loy
...Show all authors
Michael A. Marrs
Affiliation:
Flexible Display Center at Arizona State University, 7700 S. River Pkwy, Tempe, AZ 85284
Sameer M. Venugopal
Affiliation:
Flexible Display Center at Arizona State University, 7700 S. River Pkwy, Tempe, AZ 85284
Curtis D. Moyer
Affiliation:
Flexible Display Center at Arizona State University, 7700 S. River Pkwy, Tempe, AZ 85284
Edward J. Bawolek
Affiliation:
Flexible Display Center at Arizona State University, 7700 S. River Pkwy, Tempe, AZ 85284
Dirk Bottesch
Affiliation:
Flexible Display Center at Arizona State University, 7700 S. River Pkwy, Tempe, AZ 85284
Barry P. O’Brien
Affiliation:
Flexible Display Center at Arizona State University, 7700 S. River Pkwy, Tempe, AZ 85284
Rita J. Cordova
Affiliation:
Flexible Display Center at Arizona State University, 7700 S. River Pkwy, Tempe, AZ 85284
Jovan Trujillo
Affiliation:
Flexible Display Center at Arizona State University, 7700 S. River Pkwy, Tempe, AZ 85284
Cynthia S. Bell
Affiliation:
Flexible Display Center at Arizona State University, 7700 S. River Pkwy, Tempe, AZ 85284
Douglas E. Loy
Affiliation:
Flexible Display Center at Arizona State University, 7700 S. River Pkwy, Tempe, AZ 85284
Gregory B. Raupp
Affiliation:
Flexible Display Center at Arizona State University, 7700 S. River Pkwy, Tempe, AZ 85284
David R. Allee
Affiliation:
Flexible Display Center at Arizona State University, 7700 S. River Pkwy, Tempe, AZ 85284
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Abstract

A low temperature amorphous zinc indium oxide (ZIO) thin film transistor (TFT) backplane technology for high information content flexible organic light emitting diode (OLED) displays has been developed. We have fabricated 4.1-in. diagonal OLED backplanes on the Flexible Display Center’s six-inch wafer-scale pilot line using ZIO as the active layer. The ZIO based TFTs exhibited an effective saturation mobility of 18.6 cm2/V-s and a threshold voltage shift of 2.2 Volts or less under positive and negative gate bias DC stress for 10000 seconds. We report on the critical steps in the evolution of the backplane process: the qualification of the low temperature (200°C) ZIO process, the stability of the devices under forward and reverse bias stress, the transfer of the process to flexible plastic substrates, and the fabrication of white organic light emitting diode (OLED) displays.

Keywords

semiconductingoxidethin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1287: Symposium F – Low-Temperature-Processed Thin-Film Transistors , 2011 , mrsf10-1287-f09-02
Copyright
Copyright © Materials Research Society 2011

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References

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