Hostname: page-component-78c5997874-s2hrs Total loading time: 0 Render date: 2024-11-09T06:20:18.205Z Has data issue: false hasContentIssue false
  • English
  • Français

Low Temperature Rapid Thermal Formation of Tin Barrier Layers

Published online by Cambridge University Press:  28 February 2011

Barney Cohen Barney Cohen  and
Jaim Nulman Jaim Nulman
Barney Cohen Barney Cohen
Affiliation:
AG Associates, 1325 Borregas Ave., Sunnyvale, CA 94089
Jaim Nulman Jaim Nulman
Affiliation:
AG Associates, 1325 Borregas Ave., Sunnyvale, CA 94089
Get access

Abstract

TiN and TiN/TiSi2 films, formed by reacting titanium sputtered onto source-drain and field areas, may be used as local interconnects, low resistance plated junctions, and diffusion barriers. This paper discusses the application of RTP to the low temperature reaction of titanium on silicon and oxide substrates. By adjusting temperature and ambient the nitridation and silicidation reactions may be controlled to provide the desired TiN-TiSix thickness ratio. The advantages of ammonia ambient are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 92: Symposium B – Rapid Thermal Processing of Electronic Materials , 1987 , 171
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Delfino, , et al. , IEEE Electron Device Letters, vol. EDL-6, no. 11 p.591 (1985).Google Scholar
2. Tang, , et al. , IEEE Trans. Electron Devices, vol. ED-34, p. 682 (1987).Google Scholar
3. Okamoto, , et al. , IEEE VLSI Symposium, San Diego, (1986).Google Scholar