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Low Temperature Hydrogen Plasma Cleaning Processes of Si (100), Ge (100), and SixGe1−x (100)

Published online by Cambridge University Press:  22 February 2011

T. P. Schneider ,
D. A. Aldrich ,
J. Cho  and
R. J. Nemanich
T. P. Schneider
Affiliation:
Department of Physics, North Carolina State University, Raleigh, N.C. 27695–8202.
D. A. Aldrich
Affiliation:
Department of Physics, North Carolina State University, Raleigh, N.C. 27695–8202.
J. Cho
Affiliation:
Department of Physics, North Carolina State University, Raleigh, N.C. 27695–8202.
R. J. Nemanich
Affiliation:
Department of Physics, North Carolina State University, Raleigh, N.C. 27695–8202.
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Abstract

Wet chemical and in situ hydrogen plasma cleaning processes were studied and a low temperature cleaning process was developed for Si (100), Ge (100) and SixGe1−x (100) surfaces. A uv-ozone and HF based spin etch were used to initially remove contaminants and oxides from the Si (100) and SixGe1−x (100) surfaces. The Ge (100) surfaces were treated with deionized water prior to entry to UHV. Residual gas analysis (RGA) was used in the investigation of the surface removal process of the in situ H-plasma cleaning. Low Energy Electron Diffraction (LEED) and angle resolved UV-Photoemission Spectroscopy (ARUPS) were used to examine the surface structure and electronic states. The 2×1 LEED patterns were obtained for Si (100), Ge (100) and SixGe1−x (100) after cleaning at a maximum processing temperature of 300°C. By varying process conditions, the LEED showed the 1×1 and 2×1 surface diffraction patterns. The ARUPS spectra showed the electronic states and the chemistry of the cleaned surfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 21
Copyright
Copyright © Materials Research Society 1991

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References

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