Hostname: page-component-78c5997874-m6dg7 Total loading time: 0 Render date: 2024-11-05T16:17:13.041Z Has data issue: false hasContentIssue false

Low Temperature Hydrogen Plasma Cleaning Processes of Si (100), Ge (100), and SixGe1−x (100)

Published online by Cambridge University Press:  22 February 2011

T. P. Schneider
Affiliation:
Department of Physics, North Carolina State University, Raleigh, N.C. 27695–8202.
D. A. Aldrich
Affiliation:
Department of Physics, North Carolina State University, Raleigh, N.C. 27695–8202.
J. Cho
Affiliation:
Department of Physics, North Carolina State University, Raleigh, N.C. 27695–8202.
R. J. Nemanich
Affiliation:
Department of Physics, North Carolina State University, Raleigh, N.C. 27695–8202.
Get access

Abstract

Wet chemical and in situ hydrogen plasma cleaning processes were studied and a low temperature cleaning process was developed for Si (100), Ge (100) and SixGe1−x (100) surfaces. A uv-ozone and HF based spin etch were used to initially remove contaminants and oxides from the Si (100) and SixGe1−x (100) surfaces. The Ge (100) surfaces were treated with deionized water prior to entry to UHV. Residual gas analysis (RGA) was used in the investigation of the surface removal process of the in situ H-plasma cleaning. Low Energy Electron Diffraction (LEED) and angle resolved UV-Photoemission Spectroscopy (ARUPS) were used to examine the surface structure and electronic states. The 2×1 LEED patterns were obtained for Si (100), Ge (100) and SixGe1−x (100) after cleaning at a maximum processing temperature of 300°C. By varying process conditions, the LEED showed the 1×1 and 2×1 surface diffraction patterns. The ARUPS spectra showed the electronic states and the chemistry of the cleaned surfaces.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Anthony, B., Breaux, L., Hsu, T., Banerjee, S., and Tasch, A.. J. Vac. Sci. Technol. B 7, 621 (1989).CrossRefGoogle Scholar
2. Rudder, R. A., Hattangady, S. V., Posthill, J. B., and Markunas, R. J., Mat. Res. Soc. Symp. Proc. Vol. 116, 529 (1988).Google Scholar
3. Chang, R. P. H., Chang, C. C., and Darack, S.. J. Vac. Sci. Technol. 20, 45 (1982).Google Scholar
4. Oehrlein, G. S., Robey, S. W., Lindstrom, J. L., Chan, K. K., Jaso, M. A., and Scilla, G. J.. J. Electrochem. Soc. 136, 2050 (1989).Google Scholar
5. Schneider, G. S., Cho, J., Van der Weide, J., Wells, S. E., Lucovsky, G., and Nemanich, R. J., Mantini, M. J., Rudder, R. A., and Markunas, R. J., Mat. Res. Soc. Symp. Proc. 204, 333 (1991).Google Scholar
6. Fenner, D. B., Biegelsen, D. K., and Bringans, R. D.. J. Appl. Phys. 66, 419 (1989).CrossRefGoogle Scholar
7. O'Hanlon, John F.. A Users Guide to Vacuum Technology, (John Wiley & Sons, New York, 1980), p.385.Google Scholar
8. Erti, G. and Küppers, J.. Low Energy Electrons and Surface Chemistry, (Weinheim; Deerfield Beach, FI.: VCH, 1985).Google Scholar
9. Nelson, J. G., Gignac, W. J., and Williams, R. S., Robey, S. W., Tobin, J. G., and Shirley, D. A.. Phys. Rev. B27, 3924 (1983).Google Scholar