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Low Temperature Deposition of Ferromagnetic Ni-Mn-Ga Thin Films From Two Different Targets via rf Magnetron Sputtering

Published online by Cambridge University Press:  01 February 2011

A. C. Lourenço ,
F. Figueiras ,
S. Das ,
J. S. Amaral ,
G. N. Kakazei ,
D. V. Karpinsky ,
N. Soares ,
M. Peres ,
M. J. Pereira  and
P. B. Tavares
...Show all authors
A. C. Lourenço
Affiliation:
[email protected], University of Aveiro, Dept. of Physics & CICECO, Aveiro, Portugal
F. Figueiras
Affiliation:
[email protected], University of Aveiro, Dept. of Physics & CICECO, Aveiro, Portugal
S. Das
Affiliation:
[email protected], University of Aveiro, Dept. of Physics & CICECO, Aveiro, Portugal
J. S. Amaral
Affiliation:
[email protected], University of Aveiro, Dept. of Physics & CICECO, Aveiro, Portugal
G. N. Kakazei
Affiliation:
[email protected], University of Porto, IFIMUP-IN & Dept. of Physics and Astronomy, Porto, Portugal
D. V. Karpinsky
Affiliation:
[email protected], University of Aveiro, Aveiro, Portugal
N. Soares
Affiliation:
[email protected], University of Aveiro, Dept. of Physics & CICECO, Aveiro, Portugal
M. Peres
Affiliation:
[email protected], University of Aveiro, Dept. of Physics & I3N, Aveiro, Portugal
M. J. Pereira
Affiliation:
[email protected], University of Aveiro, Dept. of Physics & CICECO, Aveiro, Portugal
P. B. Tavares
Affiliation:
[email protected], University of Aveiro, Department of Physics, Aveiro, Portugal
N. Sobolev
Affiliation:
[email protected], University of Tras-os-Montes & Alto Douro, Center of Chemistry, Vila Real, Portugal
V. Amaral
Affiliation:
[email protected], University of Aveiro, Dept. of Physics & I3N, Aveiro, Portugal
N. M. Santos
Affiliation:
[email protected], University of Aveiro, Dept. of Physics & CICECO, Aveiro, Portugal
Andrei L. Kholkin
Affiliation:
[email protected], University of Aveiro, DECV & CICECO, Aveiro, Portugal
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Abstract

Low temperature (400°C) deposition of ferromagnetic Ni-Mn-Ga thin films is successfully performed via rf magnetron sputtering technique using co-deposition of two targets Ni50Mn50 and Ni50Ga50 on sapphire (0001) and Si (100) substrates. The films are in part amorphous with significant degree of crystallinity. The obtained crystallographic structure is shown to be substrate-dependent. Films on both substrates are ferromagnetic at room temperature (Curie temperature ∼ 332.5K) with well-defined hysteresis loops, low coercivity (∼ 100 Oe) and a saturation magnetization of ∼ 200 emu/cc. At low temperature (5 K), both films show increased magnetization value with wider hysteresis loops having higher coercivity and remanent magnetization. The process is therefore effective in achieving the appropriate thermodynamic conditions to deposit thin films of the Ni-Mn-Ga austenitic phase (highly magnetic at room temperature) at relatively low substrate temperature without the need for post-deposition annealing or further thermal treatment, which is prerequisite for the device fabrication.

Keywords

alloymagnetic propertiessputtering
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1250: Symposium G – Materials and Physics for Nonvolatile Memories II , 2010 , 1250-G08-02
Copyright
Copyright © Materials Research Society 2010

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References

1 Thomas, M., Heczko, O., Buschbeck, J., Rossler, U. K., McCord, J., Scheerbaum, N., Schultz, L., and Fahler, S., New J. Phys. 10, 023040 (2008).Google Scholar
2 Hakola, A., Heczko, O., Jaakkola, A., Kajava, T. and Ullakko, K., Appl. Phys. A 79 1505 (2004)10.1007/s00339-004-2831-7Google Scholar
3 Golub, V. O., Vovk, A. Y., Malkinski, L., O'Connor, C. J., Wang, Z., and Tang, J., J. Appl. Phys. 96 3865 (2004)10.1063/1.1771474Google Scholar
4 Dong, J. W., Chen, L. C., Xie, J. Q., Muller, T. A. R, Carr, D. M., Palmstrom, C. J., McKernan, S., Pan, Q., and James, R. D., J. Appl. Phys. 88 7357 (2000)10.1063/1.1326461Google Scholar
5 Dubowik, J., Kudryavtsev, Y.V. and Lee, Y.P., J. Magn. Magn. Mater. 272 1178 (2004)10.1016/j.jmmm.2003.12.1093Google Scholar
6 Heczko, O., Thomas, M., Buschbeck, J., Schultz, L. and Fahler, S., Appl. Phys. Lett. 92 072502 (2008)10.1063/1.2883961Google Scholar
7 Chernenko, V.A., Ohtsuka, M., Kohl, M., Khovailo, V.V. and Takagi, T., Smart Mater. Struct. 14 S245 (2005)Google Scholar
8 Olson, R.R., Kingand, M.E. and Wehner, G.K., J. Appl. Phys. 50 3677 (1979)Google Scholar
9US Patent no. US 6454913 B1 (Sept 24, 2002)Google Scholar
10 Sozinov, A., Likhachev, A. A., and Ullakko, K., IEEE Trans. Magn. 38 2814 (2002)10.1109/TMAG.2002.803567Google Scholar