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Low Temperature a-Si:H TFTs with a SiO2 Gate Insulator Deposited by Liquid Phase Deposition

Published online by Cambridge University Press:  21 March 2011

Richard B. M. Cross ,
David P. Oxley ,
Meenakshi Manhas  and
Ekkanath. M. Sankara Narayanan
Richard B. M. Cross
Affiliation:
Emerging Technologies Research Centre, De Montfort University, The Gateway, Leicester, United Kingdom, LE1 9BH.
David P. Oxley
Affiliation:
Emerging Technologies Research Centre, De Montfort University, The Gateway, Leicester, United Kingdom, LE1 9BH.
Meenakshi Manhas
Affiliation:
Emerging Technologies Research Centre, De Montfort University, The Gateway, Leicester, United Kingdom, LE1 9BH.
Ekkanath. M. Sankara Narayanan
Affiliation:
Emerging Technologies Research Centre, De Montfort University, The Gateway, Leicester, United Kingdom, LE1 9BH.
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Abstract

A systematic study has been made of the influence of the deposition conditions on the properties of SiO2 grown by liquid phase deposition (LPD), and a-Si:H manufactured by plasma enhanced chemical vapour deposition (PECVD) with the novel facility of source-gas heating. It is demonstrated that LPD-SiO2 can be grown at 50°C with good dielectric properties. Material has been produced with a resistivity of 1015 &cm and a dielectric strength of 9 MVcm-1.The oxide was found to have a negative fixed oxide charge of 4 × 1011 cm−2, with a dielectric constant of 3.08 and a refractive index of 1.44. In the case of a-Si:H, pre-heating the source gases has enabled material to be grown at 125°C with a hydrogen content of ∼ 10 at%, with a predominance of monohydride bonding and a photosensitivity of ∼ 104. Inverted-staggered thin film transistors have been fabricated incorporating these films with an On/Off ratio of five orders of magnitude, a sub-threshold slope of 1.3 Vdecade−1 and a field effect mobility of 0.20 cm2V−1s−1

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 808: Symposium A – Amorphous and Nanocrystaline Silicon Science and Technology-2004 , 2004 , A4.18
Copyright
Copyright © Materials Research Society 2004

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References

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