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Low Dielectric Constant Porous Silsesquioxane Films: Effect of Thermal Treatment

Published online by Cambridge University Press:  17 March 2011

Y. K. Siew ,
G. Sarkar ,
X. Hu ,
Y. Xu  and
A. See
Y. K. Siew
Affiliation:
Division of Materials Engineering, School of Applied Science, Nanyang Technological University Nanyang Avenue, Singapore, 639798 (E-mail: [email protected])
G. Sarkar
Affiliation:
Division of Materials Engineering, School of Applied Science, Nanyang Technological University Nanyang Avenue, Singapore, 639798
X. Hu
Affiliation:
Division of Materials Engineering, School of Applied Science, Nanyang Technological University Nanyang Avenue, Singapore, 639798
Y. Xu
Affiliation:
R&D Dept. Chartered Semiconductor Manufacturing Ltd., 60 Woodlands Industrial Park D, Street 2, Singapore 738406
A. See
Affiliation:
R&D Dept. Chartered Semiconductor Manufacturing Ltd., 60 Woodlands Industrial Park D, Street 2, Singapore 738406
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Abstract

Low dielectric constant, nanoporous hydrogen silsesquioxane (HSQ) films were prepared using hybrid templating method by addition of a sacrificial labile polymer, polybutadiene (PB). Thermal gravimetric analyzer (TGA) was employed to monitor the decomposition behavior of HSQ-PB films. Curing of HSQ and decomposition of PB were performed by a two-stage thermal treatment to obtain a defect-free film. The porosity level and pore morphology of the resultant porous films were found to be dependent upon thermal treatment conditions applied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 612: Symposium D – Materials, Technology & Reliability for Advanced Interconnects.. , 2000 , D5.15.1
Copyright
Copyright © Materials Research Society 2000

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