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Local Self-Order Observed During Chemical Vapor Deposition of Silicon Quantum Dots for Application in Nanocrystal Memories

Published online by Cambridge University Press:  01 February 2011

Rosaria A. Puglisi ,
Giuseppe Nicotra ,
Salvatore Lombardo ,
Barbara De Salvo  and
Cosimo Gerardi
Rosaria A. Puglisi
Affiliation:
CNR-IMM, Sezione di Catania, Str.le Primosole 50 95121 Catania, Italy
Giuseppe Nicotra
Affiliation:
CNR-IMM, Sezione di Catania, Str.le Primosole 50 95121 Catania, Italy
Salvatore Lombardo
Affiliation:
CNR-IMM, Sezione di Catania, Str.le Primosole 50 95121 Catania, Italy
Barbara De Salvo
Affiliation:
CEA-LETI, Grenoble, France
Cosimo Gerardi
Affiliation:
STMicroelectronics, Str.le Primosole 50 95121 Catania, Italy.
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Abstract

A systematic study on the Si dot formation after chemical vapor deposition on silicon oxide substrates is presented. The process has been followed from the early stages of the dot formation up to 25% of coverages. Structural characterization has been performed by means of energy filtered transmission electron microscopy, which allowed us to observe dot sizes down to 0.5 nm in radius. The nanodots are shown to be surrounded by a depleted zone, where no new Si dots are observed to nucleate. This has been attributed to the adatoms capture mechanism by pre-existing dots, during the deposition. The dot radius and the capture size are shown to collapse onto the same curve, thus indicating the scaling behavior of the process. The adatom diffusion process is shown to restrict the number of nucleation sites, the final dot size and the dot position, thus driving the process toward partial self-order.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 830: Symposium D – Materials and Processes for Nonvolatile Memories , 2004 , D5.6
Copyright
Copyright © Materials Research Society 2005

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References

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