Layer transfer and simultaneous activation of phosphorus atoms in Si films induced by semiconductor diode laser (SDL) irradiation have been investigated. Phosphorus-doped a-Si films supported by columns on a starting substrate (quartz) and a counter substrate (glass) were closely contacted face-to-face, and an 812 nm light from a SDL was irradiated to the a-Si films from the backside of the starting substrate. After SDL irradiation, 20μm wide and 1000μm long Si films were transferred to the counter substrate and were crystallized simultaneously. From optical microscope images, it was confirmed that the original form was completely maintained after the film transfer. The electrical conductivity of transferred Si film was as high as 708 S/cm. Hall measurement of the films revealed very high electron concentration of 9.5×1020 cm-3, which indicated efficient doping is achieved by the laser transfer technique.