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Lateral Seeding of Silicon-On-Insulator Using an Elliptical Laser Beam: A Comparison of Scanning Methods

Published online by Cambridge University Press:  21 February 2011

P. Zorabedian  and
T. I. Kamins
P. Zorabedian
Affiliation:
Hewlett-Packard Laboratories, 3500 Deer Creek Road, Palo Alto, CA 94304
T. I. Kamins
Affiliation:
Hewlett-Packard Laboratories, 3500 Deer Creek Road, Palo Alto, CA 94304
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Abstract

Two scanning methods for laterally-seeded recrystallization of striped silicon-on-insulator/seed structures with an elliptical laser beam are discussed. One method requires repeated remelting of the silicon film and is controlled by the temperature of the substrate, which is locally heated by the beam. This method results in very few defects and single-crystal silicon-on-insulator stripes up to 50 μm wide. The second method involves little remelting and is primarily controlled by the lateral offset of the beam with respect to the stripes. Single-crystal silicon-on-insulator stripes up to 40 μm wide have been obtained, with defects consisting primarily of stacking faults and twins, as well as some grain boundaries. These defects show little effect on MOS transistor leakage current.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 33: Symposium D – Comparison of Thin Film Transistor and SOI Technologies , 1984 , 81
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

1. Lam, H.W., Pinizzotto, R.F., and Tasch, A.F., Jr., J. Electrochem. Soc. 128, 1981 (1981).Google Scholar
2. Celler, G. K, Trimble, L.E., Ng, K.K., Leamy, H.J., and Baumgart, H., Appl. Phys. Lett. 40, 1043 (1982).CrossRefGoogle Scholar
3. Colinge, J.P., Demoulin, E., Bensahel, D., and Auvert, G., Appl. Phys.Lett. 41, 346 (1982).Google Scholar
4. Stultz, T.J. and Gibbons, J.F., AppI. Phys. Lett. 39, 498 (1981).Google Scholar
5. Sakurai, J., Kawamura, S., Nakano, M., and Takagi, M., Appl Phys. Lett. 41, 64 (1982)Google Scholar
6. Kamins, T.I., Lee, K.F., Gibbons, J.F., and Saraswat, K.C., IEEE Trans. Elect. Dev. ED-27, 290 (1980).Google Scholar
7. Shankoff, T.A., Sheng, T.T., Haszko, S.E., Marcus, R.B., and Smith, T.E., J. Electrochem. Soc. 127, 216 (1980).Google Scholar