Hostname: page-component-78c5997874-v9fdk Total loading time: 0 Render date: 2024-11-07T20:29:04.850Z Has data issue: false hasContentIssue false
  • English
  • Français

Laser Recrystallization Technique for Active Matrix LC Display

Published online by Cambridge University Press:  21 February 2011

T Nishimura ,
A. Ishizu ,
T. Matsumoto  and
Y. Akasaka
T Nishimura
Affiliation:
LSI R&D Lab. Mitsubishi Electric Corp., Itami 664, Japan
A. Ishizu
Affiliation:
Material Engineering Lab. Mitsubishi Electric Corp., Amagasaki 661 Japan
T. Matsumoto
Affiliation:
Material Engineering Lab. Mitsubishi Electric Corp., Amagasaki 661 Japan
Y. Akasaka
Affiliation:
LSI R&D Lab. Mitsubishi Electric Corp., Itami 664, Japan
Get access

Abstract

This paper demonstrates the technological approach to the high performance thin film transistor (TFT) fabricated by using the laser-recrystallization technique on a fused quartz wafer and its application for active matrix type liquid crystal display (LCD) with transmissive mode. Problem to be overcome and still ahead in the recrystallization, TFT performance, and application for LCD are addressed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 33: Symposium D – Comparison of Thin Film Transistor and SOI Technologies , 1984 , 221
Copyright
Copyright © Materials Research Society 1984

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Colinge, J.P., Demoulin, E., Bensahel, D., Auvert, G. and Morel, H., IEEE Elec. Dev. Lett., EDL–4, 75(1983)Google Scholar
2. Jolly, R.D., Kamins, T.I., and McCharles, R.H., IEEE Elec. Dev. Lett., EDL–4, 8(1983)Google Scholar
3. Akasaka, Y., Nishimura, T., and Nakata, H., 1983 Symposium on VLSI Technology Maui, Digest of Tech. Papers, 48.Google Scholar
4. Gibbons, J.F. and Lee, K.F., IEEE Elect. Dev. Lett., EDL–1, 117(1980).Google Scholar
5. Nishimura, T., Akasaka, Y., Nakata, H., Ishizu, A. and Matsumoto, T., Proceedings of the Society for Information Display, 24, 209(1982).Google Scholar
6. Luo, F.C., Chen, I., and Genovese, F.C., IEEE Trans. Elec. Dev., ED–28, 740 (1981).Google Scholar
7. Morozumi, S., Oguchi, K., Yazawa, S., Kodaira, T., Ohshima, H. and Mano, T., 1983 SID Digest of Tech. Papers, 28.Google Scholar
8. Okubo, Y., Nakagiri, T., Osada, Y., Sugata, M., Kitahara, N., and Hatanaka, K., 1982 SID Digest of Tech. Papers, 40.Google Scholar
10. Lam, H.W., Tasch, A.F. Jr. and Holloway, T.C., IEEE Elec. Dev. Lett., EDL–l, 206(1980).Google Scholar
11. Ng, K.K., Celler, G.K., Povilonis, E.I., Frye, R.C., Leamy, H.J. and Sze, S.M., IEEE Elect. Dev. Lett., EDL–2, 316(1981).10.1109/EDL.1981.25448CrossRefGoogle Scholar