Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-25T18:35:33.351Z Has data issue: false hasContentIssue false
  • English
  • Français

Laser Machining and Metallization of VIAS in Aluminum Nitride

Published online by Cambridge University Press:  21 February 2011

Sudhakar Raman  and
Janet K. Lumpp
Sudhakar Raman
Affiliation:
Electrical Engineering Department, The University of Kentucky, Lexington, KY 40506
Janet K. Lumpp
Affiliation:
Electrical Engineering Department, The University of Kentucky, Lexington, KY 40506
Get access

Abstract

A via metallization technique involving excimer laser ablation of aluminum nitride substrate with a metal backing, attached with cyanoacrylate adhesive was investigated. The objective was to develop a procedure to ensure good electrical interconnection between the thick film conductor pads and the walls of the via. An aluminum nitride compatible Ag-Pd thick film paste was used in this experiment. Two different sequences were tested: In the first sequence both sides of the aluminum nitride substrate were printed and fired and then the vias were laser drilled. In the second sequence, one side of the substrate was printed and fired first, then the vias were laser drilled and the second side was printed and fired. In both of the above sequences, laser ablation of the printed conductor and redeposition of the ablated metal backing are necessary for making a proper contact with the thick film conductor pads.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 390: Symposium S – Electronic Packaging Materials Science VIII , 1995 , 269
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Norton, M. Grant, in Indirect - Bonded Metallization of AIN, Materials Research Society Symposium, 314, 1993, pp.223–234.Google Scholar
2. Werdecker, W. and Aldinger, F., Aluminum Nitride-An Alternative Ceramic Substrate for High Power Applications in Microelectronics, IEEE Trans. Comp., Hybrids, Manuf. Technol., 7 [4], 1984, pp. 399–404 Google Scholar
3. Yim, W.M., Stofko, E.J., Zanzucchi, P.J., Pankova, J.I., Ettenberg, M., and Gilbert, S.L., J. of Applied Physics 44], 292, (1973)Google Scholar
4. Lumpp, J.K., Excimer Laser Machining and Metallization of Vias in AlN, Proceedings, Engineering Foundation: International Conference on Material Processing and Advanced Applications of Lasers, May 1994.Google Scholar
5. Excimer Laser Directly Write Al on AMN, Li Hua and Janet Lumpp, presented at the 1995 MRS Spring Meeting, San Fransisco, CA, 1995. J.K. Lumpp, and S.D. Allen, Method for Producing Conductive or Insulating Feedthroughs in a Substrate and the Substrate Produced Therefrom, Application for a United States Patent, December 1992.Google Scholar