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IR-Absorption Spectra of Impurities in 6H-SiC

Published online by Cambridge University Press:  21 February 2011

F. Engelbrecht  and
R. Helbig
F. Engelbrecht
Affiliation:
Institute of Applied Physics, University of Erlangen-Niirnberg, Staudtstr. 7, 91058 Erlangen, Germany
R. Helbig
Affiliation:
Institute of Applied Physics, University of Erlangen-Niirnberg, Staudtstr. 7, 91058 Erlangen, Germany
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Abstract

We performed infrared absorption and reflectivity measurements on serverai 6H-SiC samples at variable temperatures between T=5K and T=300K. From the temperature dependence of the observed absorption lines we separated electronic from vibronic transitions. The electronic transitions are assumed to be due to transitions from the neutral nitrogen donor occupying the three different carbon lattice sites in 6H-SiC into excited states. We determined polarization and the oscillator strengths of these transitions. From the temperature dependence of the electronic transitions we determined the valley-orbit-splitting energy and we demonstrated the influence of compensation. For the different vibronic transitions we determined the Grüneisen constants.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 529
Copyright
Copyright © Materials Research Society 1994

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References

[1] Vakulenko, O. V. and Guseva, O. A., Sov. Phys. Semicond. 15, 886 (1981) and references in thereGoogle Scholar
[2] Suttrop, W. et. al. J. Appl. Phys. 72, 3708 (1992)Google Scholar
[3] Ziegler, G., Lanig, P., Theis, D. and Weyrich, C., IEEE Trans. Electron. Dev. ED. 30, 277 (1983)Google Scholar
[4] Balkanski, M.. Optical Properties due to Phonons, in: Moss, T. S., Handbook on Semiconductors Vol. 2, North-Holland Publishing Company 1980 Google Scholar
[5] W. GÖtz et. al. J. Appl. Phys. 73, 3332 (1994)Google Scholar
[6] Engelbrecht, F. and Helbig, R., Phys. Rev. B48, 15698 (1993)Google Scholar
[7] Colwell, P. J. and Klein, M. V., Phys. Rev. B6, 498 (1972)Google Scholar