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Ion Beam Induced Metallorganic Chemical Vapor Deposition of Titanium Nitride Films as a Diffusion Barrier Between Cu and Si

Published online by Cambridge University Press:  10 February 2011

Ki-Chul Park ,
Soo-Hyun Kim  and
Ki-Bum Kim
Ki-Chul Park
Affiliation:
Division of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
Soo-Hyun Kim
Affiliation:
Division of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
Ki-Bum Kim
Affiliation:
Division of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
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Abstract

We have deposited TiN films by using ion-beam-induced chemical-vapor-deposition (IBICVD). Tetrakis-dimethyl-amido-titanium (TDMAT) was used as a precursor. N2 and Ar gas were used to generate the plasma and the ions in the plasma were extracted by using two electrically isolated grids. The energy of ion beam was about 115–127 eV. The use of N-ion beam significantly lowers the resistivity and carbon content of TiN film (∼320 μΩ-cm, 15 at.%), compared with the thermally decomposed film (∼6000 μΩ-cm, 36 at.%). The use of Ar ion beam also considerably lowers the resistivity of films (∼800 μΩ-cm), but does not reduce the carbon content. The step coverage of the thermally-decomposed film was about 70 %, while the step coverages of the films deposited using N2 and Ar ion beams were about 0 and 30 %, respectively, in 0.5 μm x 1.5 μm contacts. The etch-pit test showed that 50-nm-thick films deposited by using N2 and Ar ion beams prevent the diffusion of Cu into the Si substrate up to annealings at 550 °C and 600 °C for 1 hour, while the thermally decomposed film fails at 500 °C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 514: Symposium I – Advanced Interconnects & Contact Materials & Processes for… , 1998 , 401
Copyright
Copyright © Materials Research Society 1998

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References

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