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Investigation of SiO2 Cap for Al Implant Activation in 4H-SiC

Published online by Cambridge University Press:  01 February 2011

Feng Zhao ,
Mohammad m Islam ,
MVS Chandrasekhar  and
Tangali Sudarshan
Feng Zhao
Affiliation:
[email protected]
Mohammad m Islam
Affiliation:
[email protected], University of South Carolina, Columbia, South Carolina, United States
MVS Chandrasekhar
Affiliation:
[email protected], United States
Tangali Sudarshan
Affiliation:
[email protected], United States
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Abstract

The effect of using SiO2 capping layer during Al implant activation anneal on the performance of 4H-SiC P-i-N diodes has been investigated. Two sets of 4H-SiC pin diode samples, one with SiO2 cap and another with graphite cap, were annealed under high temperatures of 1500°C for activation after Al implantation at 650°C to form the p-type active region and the JTE region. The surface stoichiometry of annealed SiC was examined by x-ray photoelectron spectroscopy (XPS). Various material and device parameters including surface roughness, sheet resistance, minimum forward leakage current and maximum breakdown voltage have been extracted for comparison. The results show that SiO2 cap effectively protects the SiC surface during high temperature implant annealing.

Keywords

devicesmicroelectronicsx-ray photoelectron spectroscopy (XPS)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1246: Symposium B – Silicon Carbide 2010-Materials, Processing and Devices , 2010 , 1246-B06-02
Copyright
Copyright © Materials Research Society 2010

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