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Investigation of Proximity Rtd for Submicron Junctions in Vlsi Si Devices

Published online by Cambridge University Press:  21 February 2011

W. Zagozdzon-Wosik ,
P. Grabiec ,
F. Romero-Borja ,
L. T. Wood  and
G. Lux
W. Zagozdzon-Wosik
Affiliation:
Electrical Engineering Department, University of Houston, Houston, TX 77204-5932
P. Grabiec
Affiliation:
Electrical Engineering Department, University of Houston, Houston, TX 77204-5932
F. Romero-Borja
Affiliation:
Texas Center for Superconductivity and Department of PhysicsUniversity of Houston, Houston, TX 77204-5932
L. T. Wood
Affiliation:
Texas Center for Superconductivity and Department of PhysicsUniversity of Houston, Houston, TX 77204-5932
G. Lux
Affiliation:
Charles Evans & Associates, Redwood City, CA 94063
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Abstract

Proximity rapid thermal diffusion is presented as a doping process for fabrication of very shallow junctions. The kinetics of Si doping with B, P and As is investigated using sheet resistance measurements, secondary ion mass spectroscopy and FTIR analyses. The efficiency of doping is affected by the dopant transport in the SOD which depends on the structure and composition of the SOD.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 303: Symposium G – Rapid Thermal and Integrated Processing II , 1993 , 297
Copyright
Copyright © Materials Research Society 1993

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References

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