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Investigation of Highly c-axis Oriented AlN Thin Film Re-growth

Published online by Cambridge University Press:  01 February 2011

F. Martin ,
P. Muralt  and
M.-A. Dubois
F. Martin
Affiliation:
Ceramics Laboratory, Swiss Federal Institute of Technology EPFL, Lausanne, Switzerland.
P. Muralt
Affiliation:
Ceramics Laboratory, Swiss Federal Institute of Technology EPFL, Lausanne, Switzerland.
M.-A. Dubois
Affiliation:
RF microelectronics, CSEM, Neuchâtel, Switzerland.
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Abstract

The properties of AlN films grown on a first set of differently treated AlN films have been studied by XRD, XPS, AFM, in-plane stress and interferometry. All films were deposited by dc pulsed sputtering at 300°C. The first set of films consisted of smooth, pure c-axis oriented AlN monolayers with narrow rocking curve width and excellent piezoelectric coefficient grown on platinized substrate in a large thickness range of 35–2000 nm. Subsequently, a 1000 nm AlN layer has been added. The use of a strongly alkaline developer during intermediate lithography steps and the time elapsed between the two steps of AlN re-growth were found to degrade the overall quality of the films. It's been shown that the alkaline developer etches down, increases the roughness and contaminates the surface of the AlN monolayer with mainly oxides and hydroxides while the exposure of the films to air develops a native oxide layer. By reducing the air exposure time and by the use of RF plasma cleaning prior to the re-growth process, a good piezoelectric coefficient can be recovered.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 783: Symposium B – Materials, Intergration, and Packaging Issues for High-Frequency Devices , 2003 , B4.2
Copyright
Copyright © Materials Research Society 2004

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References

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