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Interactions of Point and Extended Defects in Structural Intermetallics: Real-Space Lmto-Recursion Calculations

Published online by Cambridge University Press:  10 February 2011

O. Yu. Kontsevoi ,
O. N. Mryasov ,
Yu. N. Gornostyrev  and
A. J. Freeman
O. Yu. Kontsevoi
Affiliation:
Department of Physics and Astronomy, Northwestern University, Evanston, IL, 60208–3112.
O. N. Mryasov
Affiliation:
Department of Physics and Astronomy, Northwestern University, Evanston, IL, 60208–3112.
Yu. N. Gornostyrev
Affiliation:
Institute of Metal Physics, Ekaterinburg, Russia
A. J. Freeman
Affiliation:
Department of Physics and Astronomy, Northwestern University, Evanston, IL, 60208–3112.
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Abstract

A real-space TB-LMTO-recursion method for electronic structure calculations is applied to the study of interacting extended and point defects in NiAl. Results of calculations for the pure intermetallic and with ternary additions (within a supercell model) show good agreement with band structure results. Further, electronic structure and total energy calculations of point (single impurity, M=Ti, V, Cr, Mn, Fe and Co) and planar defects such as anti-phase boundaries (APB) were carried out and the interaction between them was determined. We found that for the ½〈111〉{110} APB in NiAl, ternary additions occupy exclusively the 3d-metal sublattice and decrease the APB energy (except for Co). Finally, we employ TB-LMTO-REC to study the electronic structure of the most complex extended defect, a dislocation. We demonstrate for the 〈100〉{010} edge dislocation in NiAl that: (i) quasi-localized states may exist as a result of specific lattice distortions in the dislocation core with a type of “broken” bonds; (ii) the electronic structure changes appreciably in the process of dislocation motion; (iii) van-Hove singularities present in the ideal crystal may be shifted to E;r as a result of the dipolar character of the deformations in the dislocation core.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 491: Symposium R – Tight Binding Approach to Computational Materials Science , 1997 , 143
Copyright
Copyright © Materials Research Society 1998

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References

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