Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-11-25T21:45:40.754Z Has data issue: false hasContentIssue false
  • English
  • Français

Intensity Modulation of Glancing Angle X-Ray Diffraction Spectra of GexSi1−x/Si Superlattices

Published online by Cambridge University Press:  22 February 2011

Xun Wang ,
G. L. Zhou ,
C. Sheng  and
M. R. Yu
Xun Wang
Affiliation:
Surface Physics Laboratory, Fudan University, Shanghai, CHINA
G. L. Zhou
Affiliation:
Surface Physics Laboratory, Fudan University, Shanghai, CHINA
C. Sheng
Affiliation:
Surface Physics Laboratory, Fudan University, Shanghai, CHINA
M. R. Yu
Affiliation:
Surface Physics Laboratory, Fudan University, Shanghai, CHINA
Get access

Abstract

The glancing angle x-ray diffraction spectra of GexSi1−x/Si superlattices grown by MBE under different temperatures are investigated. Three different types of the intensity distributions of diffraction peaks are observed, which are believed to be corresponded with different situations of interfaces. If all the interfaces in superlattice structure are highly flat, up to 17 orders diffraction peaks are identified with their intensities modulated by a periodical envelope function, otherwise the distribution of diffraction intensities follows simply a decaying function. A quantitative analysis using computer simulation based on the modified Bragg's law and the optical multilayer theory is used to derive the structural parameters including the thicknesses of Si and GexSi1−x layers, superlattice period, Ge content x and the degree of interfacial roughness.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 235
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Baribeau, J. M., Appl. Phys. Lett., 52, 105 (1988).Google Scholar
2. Vanderiberg, J. M., Bean, J. C., Hamm, R. A. and Hull, R., Appl. Phys. Lett., 52, 1152 (1988).CrossRefGoogle Scholar
3. Baribeau, J. M., Kechang, S. and Munro, K., Appl. Phys. Lett., 54, 323 (1989).CrossRefGoogle Scholar
4. Ishizaka, A. and Shiraki, Y., J. Electrochem. Soc., 133, 666 (1986).Google Scholar
5. Sugawara, M., Kondo, M., Yamazaki, S. and Nakajima, K., J. Cryst. Growth, 93, 318 (1988).Google Scholar
6. International Tables for X-ray Crystallography, Vol. IV (Kynoch, Birmingham, UK, 1973).Google Scholar
7. Spiller, E. and Rosenbluth, A. E., Opt. Eng., 25, 954 (1986).Google Scholar