Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-11-25T18:23:20.153Z Has data issue: false hasContentIssue false
  • English
  • Français

Integration Issues for Low Dielectric Constant Materials in each Generation of ULSI's

Published online by Cambridge University Press:  10 February 2011

Hideki Gomi ,
Koji Kishimoto ,
Tatsuya Usami ,
Ken-ichi Koyanagi ,
Takashi Yokoyama ,
Noriaki Oda  and
Yoshihisa Matsubara
Hideki Gomi
Affiliation:
ULSI Device Development Laboratories NEC Corporation 1120 Shimokuzawa Kanagawa, 229–1198 JAPAN
Koji Kishimoto
Affiliation:
ULSI Device Development Laboratories NEC Corporation 1120 Shimokuzawa Kanagawa, 229–1198 JAPAN
Tatsuya Usami
Affiliation:
ULSI Device Development Laboratories NEC Corporation 1120 Shimokuzawa Kanagawa, 229–1198 JAPAN
Ken-ichi Koyanagi
Affiliation:
ULSI Device Development Laboratories NEC Corporation 1120 Shimokuzawa Kanagawa, 229–1198 JAPAN
Takashi Yokoyama
Affiliation:
ULSI Device Development Laboratories NEC Corporation 1120 Shimokuzawa Kanagawa, 229–1198 JAPAN
Noriaki Oda
Affiliation:
ULSI Device Development Laboratories NEC Corporation 1120 Shimokuzawa Kanagawa, 229–1198 JAPAN
Yoshihisa Matsubara
Affiliation:
ULSI Device Development Laboratories NEC Corporation 1120 Shimokuzawa Kanagawa, 229–1198 JAPAN
Get access

Abstract

The technologies utilizing Fluorinated Silicon Oxide (FSG, k=3.6) and Hydrogen Silsesquioxane (HSQ, k=3.0) have been established for 0.25-µm and 0.1 8-µm generation ULSIs. However, low-k materials for the next generation ULSIs, which have a dielectric constant of less than 3.0, have not become mature yet. In this paper, we review process integration issues in applying FSG and HSQ, and describe integration results and device performance using Fluorinated Amorphous Carbon (a-C:F, k=2.5) as one of the promising low-k materials for the next generation ULSIs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 564: Symposium N – Advanced Interconnects and Contacts , 1999 , 509
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Armbrust, D. S., Stamper, A. K., Serianni, L. A., and Trahan, M. A., DUMIC, 1998, p. 67.Google Scholar
2. Oda, N., Usami, T., Kisimoto, K., Matsumoto, A., Mikagi, M., Kikuta, K., Gomi, H., and Sakai, I., VLSI Symp. 1997, p. 79.Google Scholar
3. Fowler, B.. and O'Brien, E., J. Vac. Soc. Tchnol. B, Vol. 12, No 1, 1994, p. 441–448.10.1116/1.587141Google Scholar
4. Usami, T., Ishikawa, H., and Gomi, H., MRS Symp., Proc. 476, 1997, p.69.10.1557/PROC-476-69Google Scholar
5. Stamper, A. K., McGahay, V., Shapiro, M., Miller, L. A., Tian, X., Bryant, A., and Scrianni, A., MRS Symp., Proc. 443, 1999, p. 183.10.1557/PROC-443-183Google Scholar
6. Miller, L. A., and Stamper, A. K., Proc. VMIC conference, 1995, p. 144.Google Scholar