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Integrated Rib Waveguide-Photodetector Using Si/Si1−xGex Multiple Quantum Wells for Long Wavelenghts

Published online by Cambridge University Press:  22 February 2011

V. P. Kesan ,
P. G. May ,
G. V. Treyz ,
E. Bassous ,
S. S. Iyer  and
J. -M. Halbout
V. P. Kesan
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, NY 10598.
P. G. May
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, NY 10598.
G. V. Treyz
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, NY 10598.
E. Bassous
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, NY 10598.
S. S. Iyer
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, NY 10598.
J. -M. Halbout
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, NY 10598.
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Abstract

We have investigated the structural, electrical, and optical quality of epitaxial Si and Si1−xGex films grown by MBE on SIMOX (Separation by IMplanted OXygen) silicon substrates. Epitaxial films grown on these SOI substrates have been characterized using planar and cross-sectional TEM, high resolution X-ray diffraction, SIMS, and Seeco chemical etching to delineate defects. We have fabricated Si/SiGe P-i-N photodetectors integrated with Si waveguides on SOI for long wavelength applications. Low reverse leakage current densities were seen in these device structures. The photodetector exhibited an internal quantum efficiency of 50% at 1.1 μm with a frequency response bandwidth of 2 GHz.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 483
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

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