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In-Situ Temperature Control for Rtp Via Thermal Expansion Measurement

Published online by Cambridge University Press:  21 February 2011

Bruce Peuse  and
Allan Rosekrans
Bruce Peuse
Affiliation:
Peak Systems, Inc., 3550 West Warren Avenue, Fremont, CA 94070
Allan Rosekrans
Affiliation:
Peak Systems, Inc., 3550 West Warren Avenue, Fremont, CA 94070
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Abstract

A new method of temperature control for rapid thermal processing of silicon wafers is presented whereby in-situ wafer temperature is determined by measurement of wafer thermal expansion via an optical micrometer mechanism. The expansion measurement technique and its implementation into a rapid thermal processing system for temperature control are described. Preliminary data show the wafer to wafer temperature repeatability to be 1% (3-σ) using this technique.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 303: Symposium G – Rapid Thermal and Integrated Processing II , 1993 , 125
Copyright
Copyright © Materials Research Society 1993

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References

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