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Influences of Plasma Processed Interface Layers on Germanium MOS Devices with ALD Grown HfO2

Published online by Cambridge University Press:  01 February 2011

Takuya Sugawara ,
Raghavasimhan Sreenivasan ,
Yasuhiro Oshima  and
Paul C. McIntyre
Takuya Sugawara
Affiliation:
[email protected], Tokyo Electron Ltd., Leading-edge Process Development Center, 650 Mitsuzawa, Hosaka-Cho, Nirasaki, 407-0192, Japan
Raghavasimhan Sreenivasan
Affiliation:
[email protected], Stanford University, Dept. of Materials Science and Engineering, Stanford, CA, 94305, United States
Yasuhiro Oshima
Affiliation:
[email protected], Tokyo Electron America Inc., Development Planning Department, Santa Clara, CA, 95054, United States
Paul C. McIntyre
Affiliation:
[email protected], Stanford University, Dept. of Materials Science and Engineering, Stanford, CA, 94305, United States
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Abstract

Germanium and hafnium-dioxide (HfO2) stack structures' physical and electrical properties were studied based on the comparison of germanium and silicon based metal-oxide-semiconductor (MOS) capacitors' electrical properties. In germanium MOS capacitor with oxide/oxynitride interface layer, larger negative flat-band-voltage (Vfb) shift compared with silicon based MOS capacitors was observed. Secondary ion mass spectrum (SIMS) characteristics of HfO2-germanium stack structure with germanium oxynitride (GeON) interfacial layer showed germanium out diffusion into HfO2. These results indicate that the germanium out diffusion into HfO2 would be the origin of the germanium originated negative Vfb shift. Using Ta3N5 layer as a germanium passivation layer, reduced Vfb shift and negligible hysteresis were observed. These results suggest that the selection of passivation layer strongly influences the electrical properties of germanium based MOS devices.

Keywords

GeHfplasma-enhanced CVD (PECVD) (deposition)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 996: Symposium H – Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies , 2007 , 0996-H04-02
Copyright
Copyright © Materials Research Society 2007

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References

1 Chui, C. O., Kim, H., Chi, D., Triplett, B. B., McIntyre, P. C., and Saraswat, K. C., Tech. Dig. - Int. Electron Devices Meet. 2002, 437.Google Scholar
2 Lee, B. H., Kang, L., Nieh, R., Qi, W.-J., and Lee, J. C., Appl. Phys. Lett. 76, 1926 (2000)Google Scholar
3 Maeda, T., Nishizawa, M., Morita, Y. and Takagi, S., Appl. Phys. Lett. 90, 72911 (2007)Google Scholar
4 Kita, K., Kyuno, K. and Toriumi, Akira, Appl. Phys. Lett. 85, 52 (2004)Google Scholar
5 Sreenivasan, R., Kim, H., Saraswat, K., and McIntyre, P. C., Appl. Phys. Lett. 89, 112903 (2006)Google Scholar
6 Sugawara, T., Sreenivasan, R., and McIntyre, P. C., Mater. Res. Soc. Symp. Proc. Vol. 917 E01–02 (2006)Google Scholar
7 Yeo, Y. C., Ranade, P., King, T. J., and Chenming, H., IEEE Electron Device Lett. 23, 342 (2002)Google Scholar
8 Akasaka, Y. et al., Jap. J. Appl. Phys., 45, L1289 (2006)Google Scholar
9 Ha, J., McIntyre, P. C., and Cho, K., J. Appl. Phys. 101, 33706 (2007)Google Scholar
10 Cheng, C. C., Chien, C. H., Chen, C. W., Hsu, S. L, Yang, C. H., and Changa, C. Y., J. Electrochem. Soc. 153, F160 (2006)Google Scholar
11 Whang, S. J., Lee, S. J., Gao, Fei, Wu, Nan, Zhu, C. X., Pan, Ji Sheng, Tang, Lei Jun, and Kwong, D. L., Tech. Dig. - Int. Electron Devices Meet. 2004, 307 (2004)Google Scholar
12 Sreenivasan, R., Sugawara, T., Saraswat, K., and McIntyre, P. C., Appl. Phys. Lett. 90, 102101 (2007)Google Scholar