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Influence of Thermal Treatments on the Chemistry and Self-Assembly of Ge Nanoparticles on SiO2 Surfaces

Published online by Cambridge University Press:  01 February 2011

Scott K. Stanley ,
Shawn S. Coffee  and
John G. Ekerdt
Scott K. Stanley
Affiliation:
Department of Chemical Engineering, The University of Texas at Austin, Austin, Texas, USA
Shawn S. Coffee
Affiliation:
Department of Chemical Engineering, The University of Texas at Austin, Austin, Texas, USA
John G. Ekerdt
Affiliation:
Department of Chemical Engineering, The University of Texas at Austin, Austin, Texas, USA
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Abstract

GeH4 is thermally cracked over a hot filament depositing 0.7–15 ML Ge onto 2–7 nm SiO2/Si(100) at substrate temperatures of 300–970 K. Ge, GeHx, GeO, and GeO2 desorption is monitored through temperature programmed desorption in the temperature range 300–1000 K. Ge bonding changes are analyzed during annealing from 300–1000 K with X-ray photoelectron spectroscopy (XPS). Low temperature desorption features are attributed to GeO and GeH4. No GeO2 desorption is observed, but GeO2 decomposition to Ge through high temperature pathways is seen above 700 K. Germanium oxidization results from Ge etching of the oxide substrate, which is demonstrated through XPS. Ge nanoparticle formation on SiO2 is demonstrated using the agglomeration process. With these results, explanations for the difficulties of conventional chemical vapor deposition to produce Ge nanocrystals on SiO2 surfaces are proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 830: Symposium D – Materials and Processes for Nonvolatile Memories , 2004 , D1.8
Copyright
Copyright © Materials Research Society 2005

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