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The Influence Of Stress on The Growth of Titanium Silicide Thin Films on (001) Silicon Substrates

Published online by Cambridge University Press:  10 February 2011

S. L. Cheng ,
S. M. Chang ,
H. Y. Huang ,
Y. C. Peng ,
L. J. Chen ,
B. Y Tsui ,
C. J. Tsai  and
S. S. Guo
S. L. Cheng
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China, [email protected]
S. M. Chang
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China, [email protected]
H. Y. Huang
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China, [email protected]
Y. C. Peng
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China, [email protected]
L. J. Chen
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China, [email protected]
B. Y Tsui
Affiliation:
Electronics Research and Service Organization, Industrial Technology and Research Institute, Hsinchu, Taiwan, Republic of China
C. J. Tsai
Affiliation:
Institute of Materials Engineering, National Chung Hsing University, Taichung, Taiwan, Republic of China
S. S. Guo
Affiliation:
Institute of Materials Engineering, National Chung Hsing University, Taichung, Taiwan, Republic of China
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Abstract

The influence of stress on the enhanced formation of C54-TiSi2 phase has been investigated. Tensile stress induced by backside CoSi2 film on the silicon substrate has been found to enhance the growth of C54-TiSi2 on (001)Si. The thickness of amorphous interlayers (a-interlayers) between Ti films and silicon substrates was found to be thicker and thinner in the tensilly and compressively stressed samples, respectively. From auto-correlation function analysis, the thicker a-interlayer was found to consist of a higher density of crystallites. The crystallites provide nucleation sites for C49-TiSi2 and facilitate the formation of C49-TiSi2 of small size. The larger total area of C49-TiSi2 grain boundaries supplies more nucleation sites for the phase transformation of C49- to C54-TiSi2. Therefore, the tensile stress present in the silicon substrate promotes the formation of a-interlayer and decreases the grain size of C49- TiSi2, which increases the nucleation density of the C54-TiSi2 phase. As a result, the transformation of C49- to C54-TiSi2 phase is enhanced.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 564: Symposium N – Advanced Interconnects and Contacts , 1999 , 9
Copyright
Copyright © Materials Research Society 1999

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