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InAs and InP Quantum Dot Molecules and their Potentials for Photovoltaic Applications

Published online by Cambridge University Press:  01 February 2011

Wipakorn Jevasuwan ,
Supachok Thainoi ,
Songphol Kanjanachuchai ,
Somchai Ratanathammaphan  and
Somsak Panyakeow
Wipakorn Jevasuwan
Affiliation:
[email protected], Chulalongkorn University, Department of Electrical Engineering, Faculty of Engineering, Phyathai Road, Bangkok 10330, Thailand
Supachok Thainoi
Affiliation:
[email protected], Chulalongkorn University, Department of Electrical Engineering, Faculty of Engineering, Phyathai Road, Bangkok, 10330, Thailand
Songphol Kanjanachuchai
Affiliation:
[email protected], Chulalongkorn University, Department of Electrical Engineering, Faculty of Engineering, Phyathai Road, Bangkok, 10330, Thailand
Somchai Ratanathammaphan
Affiliation:
[email protected], Chulalongkorn University, Department of Electrical Engineering, Faculty of Engineering, Phyathai Road, Bangkok, 10330, Thailand
Somsak Panyakeow
Affiliation:
[email protected], Chulalongkorn University, Department of Electrical Engineering, Faculty of Engineering, Phyathai Road, Bangkok, 10330, Thailand
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Abstract

Self-assembled InAs and InP quantum dot molecules (QDMs) are grown on GaAs substrates using different molecular beam epitaxial (MBE) growth techniques. The structural and optical properties of the two types of QDMs are then compared and reported. Multi-stack high-density (1012 cm-2) InAs QDMs are grown and when inserted into GaAlAs/GaAs heterostructure results in high-efficiency solar cells. As an alternative to InAs, InP QDMs are grown by droplet epitaxy of In and annealing under P2 pressure. While the number of quantum dots per QDM in the case of InP is in the range of 10 to 12 dots, those in the case of InAs can be smaller or much larger depending on exact growth parameters prior to QD growth. Photoluminescence (PL) measurements show that while InAs QDMs provide room-temperature optical output that peaks at 1.1 eV, InP QDMs have no PL output, possibly due to crystal defects created by low-temperature processing associated with droplet epitaxy. Discussion on the practicality of our QDMs as material for intermediate band solar cells is also provided.

Keywords

molecular beam epitaxy (MBE)photovoltaicepitaxy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 959: Symposium M – Quantum Dots—Growth, Behavior and Applications , 2006 , 0959-M17-18
Copyright
Copyright © Materials Research Society 2007

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