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Improvement of Organic Light-emitting Devices by Controlling Deposition Temperature and Inclusion of Carbon Nanotubes

Published online by Cambridge University Press:  01 February 2011

Guangfeng Wang ,
XiaoMing Tao  and
Wei Chen
Guangfeng Wang
Affiliation:
[email protected], THE HONG KONG POLYTECHNIC UNIVERSITY, ITC, HONG HOM,KOWLOON,HONGKONG, HONG KONG, N/A, N/A, Hong Kong
XiaoMing Tao
Affiliation:
[email protected], The Hong Kong Polytechnic University, Institute of Textiles and Clothing, Hung Hom,Kowloon,, Hong Kong, N/A, N/A, China, People's Republic of
Wei Chen
Affiliation:
[email protected], The Hong Kong Polytechnic University, Institute of Textiles and Clothing, Hung Hom,Kowloon,, Hong Kong, N/A, N/A, China, People's Republic of
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Abstract

Research was conducted to improve performance of organic light-emitting devices (OLEDs) on flexible polyethylene terephthalate (PET) substrates based on tris-(8-hydroxyquinoline)¨Caluminum (Alq3). Based on double layer structure, indium tin oxide(ITO)/N,N’Diphenyl-N-N’-di(m-tdyl) benzidine (TPD)/Alq3/Al, flexible OLEDs on polyethylene terephthalate (PET) substrates were fabricated by physical vapor deposition (PVD) method, with the Alq3 layer deposited at 90°C , 120°C and 150°C, respectively. It was found that the temperature had great effect on the surface morphology of Alq3 and the devices fabricated at high temperature (150°C) showed a higher external efficiency than those fabricated at low temperature (90°C , 120°C).

Multi wall carbon nanotubes (MWCNTs) doping poly(3,4-ethylene dioxythiophene) (PEDOT) : poly(styrene sulfonate) (PSS) was used as hole injection layer to improve performance of OLEDs based on Alq3. PEDOT:PSS, which was doped by 0.2 wt.%, 0.4 wt.%, 0.6 wt.%, 0.8 wt.% and 1 wt.% MWCNTs, was coated on clean PET substrate with ITO by spin- coating method. The light-emitting layer (Alq3) and cathode layer (Al) were deposited by PVD method. It was found that the electroluminescence (EL) intensity of the OLEDs were highly improved by adopting MWCNTs doping PEDOT:PSS as hole injection layer. The luminous intensity obtained from the device with a concentration of 0.4 wt.% MWCNTs in the PEDOT:PSS layer was three folds as those adopted from device without MWCNTS doping in the PEDOT:PSS layer.

Keywords

luminescencenanostructurephysical vapor deposition (PVD)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 916: Symposium DD – Solid-State Lighting Materials and Devices , 2006 , 0916-DD03-04
Copyright
Copyright © Materials Research Society 2006

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