Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-25T16:55:12.925Z Has data issue: false hasContentIssue false
  • English
  • Français

Improved Defect Classification Techniques of a Laser Scattering Detection System for Post CMP Silicon Dioxide Wafers

Published online by Cambridge University Press:  01 February 2011

Daniel Mateja ,
Toshi Kasai ,
Michael Denham  and
Haresh Siriwardane
Daniel Mateja
Affiliation:
[email protected], Cabot Microelectronics, R&D 870 N. Commons Drive, Aurora IL 60504, United States
Toshi Kasai
Affiliation:
[email protected], Cabot Microelectronics, R&D, 870 N. Commons Drive, Aurora, IL, 60504, United States
Michael Denham
Affiliation:
[email protected], Cabot Microelectronics, R&D, 870 N. Commons Drive, Aurora, IL, 60504, United States
Haresh Siriwardane
Affiliation:
[email protected], Cabot Microelectronics, R&D, 870 N. Commons Drive, Aurora, IL, 60504, United States
Get access

Abstract

A laser light scattering technique was used for the identification of defects on silicon dioxide (SiO2) wafers polished with a tungsten CMP slurry. Defects were then classified as scratches and particles using scanning electron microscopy (SEM). The effects of the incident beam illumination and scattering geometry on the defect detection are examined. Appropriate experimental conditions for selective detection of scratches and particles are discussed in conjunction with the estimated defect count and fractional ratio for specific defect types and sizes. The findings are qualitatively consistent with predicted light scattering distributions simulated from silicon bare substrates.

Keywords

laserdefectsCMP
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 991: Symposium C – Advances and Challenges in Chemical Mechanical Planarization , 2007 , 0991-C09-02
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Takami, K., Defect inspection of wafers by laser scattering, Mater. Sci. Eng. B, 44, 181–7, (1997)Google Scholar
[2] Olson, C. R., Yalamanchili, M. R., Shortt, D. W. and Mule'Stagno, L., Challenges facing 65 nm particle metrology and process performance to meet ITRS requirements, 14, Future Fab. Intl. (2003)Google Scholar
[3] Stokowski, S. and Vaez-Iravani, M., Wafer inspection technology challenges for USLI manufacturing, AIP Conf. Proc. 449, 405–15 (1998)Google Scholar
[4] Kasai, T., Dowell, C. and Somanchi, A., Applications of laser assisted defect detection system for chemical mechanical planarization (CMP) slurry development in the rigid disk polishing, Meas. Sci. Tech., in press (2007)Google Scholar
[5] Knollenberg, R. G., A polarization diversity two-color surface analysis system, J. Environ. Sci., 30–8 (1987)Google Scholar
[6] KLA-Tencor, SP1-TBI, Operations and overview, Educational services, Rev. D (2001)Google Scholar
[7] KLA-Tencor, SP1 unpatterned wafer inspection system user manual, Rev. A (1998)Google Scholar
[8] Kerker, M., The Scattering of Light, Academic Press, New York (1969)Google Scholar