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Improved a-Si:H TFT Performance Using a-SixN1-x / a-SixC1-x Stack Dielectrics

Published online by Cambridge University Press:  10 February 2011

G. Lavareda ,
E. Fortunato ,
C. Nunes Carvalho  and
R. Martins
G. Lavareda
Affiliation:
Faculdade de Ciências e Tecnologia - Departamento de Ciência dos Materiais, FCT/UNL Centro de Excelência de Microelectrónica e Optoelectrónica de Processos, CEMOP/UNINOVA Centro de Física Molecular, CFM/UTL. Quinta da Torre, 2825 Monte da Caparica - PORTUGAL
E. Fortunato
Affiliation:
Faculdade de Ciências e Tecnologia - Departamento de Ciência dos Materiais, FCT/UNL Centro de Excelência de Microelectrónica e Optoelectrónica de Processos, CEMOP/UNINOVA Centro de Física Molecular, CFM/UTL. Quinta da Torre, 2825 Monte da Caparica - PORTUGAL
C. Nunes Carvalho
Affiliation:
Faculdade de Ciências e Tecnologia - Departamento de Ciência dos Materiais, FCT/UNL Centro de Excelência de Microelectrónica e Optoelectrónica de Processos, CEMOP/UNINOVA Centro de Física Molecular, CFM/UTL. Quinta da Torre, 2825 Monte da Caparica - PORTUGAL
R. Martins
Affiliation:
Faculdade de Ciências e Tecnologia - Departamento de Ciência dos Materiais, FCT/UNL Centro de Excelência de Microelectrónica e Optoelectrónica de Processos, CEMOP/UNINOVA Centro de Física Molecular, CFM/UTL. Quinta da Torre, 2825 Monte da Caparica - PORTUGAL
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Abstract

In this paper we present a study on the electrical characteristics (conductivity, σ and relative dielectric constant, εr,.) of amorphous silicon nitride (a-SixN1-x) and carbide (a-SixC1-x) films deposited by PECVD, used as dielectric materials in TFT devices, aiming to select the most adequate alloy that lead to improve device performances. Besides that, double stack a-SixN1-x/a-SixC1-x structures were developed and applied as dielectric layers on TFTs, whose performances show to be superior to those ones using single silicon nitride or silicon carbide as dielectric.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 424: Symposium H – Flat Panel Display Materials II , 1996 , 59
Copyright
Copyright © Materials Research Society 1997

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