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Impact of Oxygen during Post-Gate Processing on MOS Device Characteristics
Published online by Cambridge University Press: 15 February 2011
Abstract
The effects of post-gate processing in N2+O2 (0˜40%) ambient (e.g., source/drain annealing, BPSG densification and reflow) on the initial MOS characteristics and reliability are discussed in this study. In comparison with processing in pure N2 ambient, it is found that processing in N2+O2-enriched ambient causes a significant, but, transient low-field breakdown of MOS capacitors on both n- and p-wells when electron injection occurs at the poly-gate/SiO2 interface. As a result, the p-channel MOSFETs with high concentration-O2 (˜40%) processing have an excess (i.e., two orders of magnitude) gate leakage current. The experimental results seem to suggest that the annealing in O2-enriched ambient (vs. pure N2 ambient) may induce positive charges near the poly-gate/SiO2 interface which reduce the electron tunneling barrier. Our results also suggest that the induced positive-charges are annihilated immediately upon the application of electric fields.
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- Copyright © Materials Research Society 1991