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Impact of Oxygen during Post-Gate Processing on MOS Device Characteristics

Published online by Cambridge University Press:  15 February 2011

Steven S. Lee ,
G. Q. Lo  and
D. L. Kwong
Steven S. Lee
Affiliation:
NCR Corporation, Microelectronics Division, Colorado Spring, CO 80916
G. Q. Lo
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712
D. L. Kwong
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712
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Abstract

The effects of post-gate processing in N2+O2 (0˜40%) ambient (e.g., source/drain annealing, BPSG densification and reflow) on the initial MOS characteristics and reliability are discussed in this study. In comparison with processing in pure N2 ambient, it is found that processing in N2+O2-enriched ambient causes a significant, but, transient low-field breakdown of MOS capacitors on both n- and p-wells when electron injection occurs at the poly-gate/SiO2 interface. As a result, the p-channel MOSFETs with high concentration-O2 (˜40%) processing have an excess (i.e., two orders of magnitude) gate leakage current. The experimental results seem to suggest that the annealing in O2-enriched ambient (vs. pure N2 ambient) may induce positive charges near the poly-gate/SiO2 interface which reduce the electron tunneling barrier. Our results also suggest that the induced positive-charges are annihilated immediately upon the application of electric fields.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 225: Symposium G – Materials Reliability Issues in Microelectronics , 1991 , 253
Copyright
Copyright © Materials Research Society 1991

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References

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