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Hrem of Defects in Silicon at Twin Intersections

Published online by Cambridge University Press:  21 February 2011

C. J. D. Hetherington
C. J. D. Hetherington*
Affiliation:
National Center for Electron Microscopy, Lawrence Berkeley Laboratory, University of California, 1 Cyclotron Rd., Berkeley, CA 94720.
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Abstract

Defects found in and around intersections of deformation twins have been examined by high resolution electron microscopy. Experimental difficulties, especially local buckling of the crystal and radiation damage under the electron beam, lead to a need to interpret images of lattices tilted by almost a degree from the zone axis. This paper demonstrates the ability of image simulation programs to model successfully the scattering from a tilted crystal. It is shown how the generation of moir6 patterns between a lattice image and a reference array of dots offers a convenient method for extracting information about distortions of the lattice around defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 183: Symposium E – High Resolution Electron Microscopy of Defects in Materials , 1990 , 123
Copyright
Copyright © Materials Research Society 1990

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